Publications

• Communication dans un congrès

Evolution de caractéristiques statiques de HEMTs AlGaN/GaN soumis à un stress électrique réalisé à différentes températures

B. Boudart, Jean-François Llibre, D. Briand, Boubekeur Tala-Ighil, H. Toutah, Yannick Guhel, Jean-Claude de Jaeger, Z. Bougrioua, Marianne Germain, Ingrid Moerman

13es Journées Nationales Microondes, 2003, Lille, France. ⟨hal-01654259⟩

• Chapitre d'ouvrage

Guided wave techniques for optical characterization of lead based ferroelectrics

El Hadj Dogheche, X. Lansiaux, Denis Remiens

REMIENS D. Recent research developments in piezoelectric materials for macro/micro systems, Research Signpost, Kerala, India, pp.211-235, 2003. ⟨hal-00132004⟩

• Article dans une revue

Path delay model based on alpha-stable distribution for the 60 GHz indoor channel

Nourddine Azzaoui, Laurent Clavier, Rachid Sabre

In this work we give a statistical model of the path's arrival time in the 60GHz wide band channel. This model is based on the class of stables distributions; we show its accurateness on modeling real data. We also give a theoretical justification of its compatibility.

Proceeding of Global Telecommunications Conference, 2003, Volume 3, pp.1638 - 1643 vol.3. ⟨10.1109/GLOCOM.2003.1258515⟩. ⟨hal-00255952⟩

• Communication dans un congrès

Electro-optical probe dedicated to the on-line testing of electronic systems

B. Pannetier, P. Lemaitre-Auger, S. Tedjini, El Hadj Dogheche, Denis Remiens

2003, pp.275. ⟨hal-00162741⟩

• Communication dans un congrès

Evaluation de la dégradation de béton par ondes ultrasonores haute fréquence

Bogdan Piwakowski, M. Goueygou, S. Ould-Naffa, F. Buyle-Bodin

GDR Ondes, Contrôle non destructif, 2003, Paris, France. ⟨hal-00250186⟩

• Communication dans un congrès

Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, Emmanuel Dubois, Guilhem Larrieu, Julien Penaud, Xavier Baie

In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of metal with semiconductor. In order to get a broad vision of the most…

Conference on Microscopy of Semiconducting Materials, Mar 2003, Cambridge, United Kingdom. pp.479-482, ⟨10.1201/9781351074636-110⟩. ⟨hal-00250182⟩

• Communication dans un congrès

Accordabilité d'un circuit microonde par adjonction d'un substrat cristal liquide

Nicolas Tentillier, Bertrand Splingart, Erick Paleczny, Jean-François Legier, Christian Legrand

Treizièmes Journées Nationales Micro-ondes (JNM 2003), May 2003, Lille, France. pp.3D-4. ⟨hal-00146562⟩

• Article dans une revue

Actionneurs films minces pour contrôle santé de structures

E. Fribourg-Blanc, M. Dupont, D. Osmont, Eric Cattan, Denis Remiens

Instrumentation, Mesure, Métrologie, 2003, 3, pp.225-237. ⟨hal-00146476⟩

• Communication dans un congrès

Comparative measurements of the optical spectrum dependence on distance between laterally coupled diode lasers

H. Lamela, R. Santos, G. Carpintero, Jean-Pierre Vilcot, A. Barsella, J. Figueiredo, M. Pessa

2003, pp.86-91. ⟨hal-00146495⟩

• Communication dans un congrès

Novel dual-mode laser structures

S. Garidel, Jean-Pierre Vilcot, Didier Decoster, M. Francois, M. Muller

Semiconductor and Integrated Optoelectronics, SIOE 2003, 2003, Cardiff, Wales, United Kingdom. ⟨hal-00146584⟩