Publications

Affichage de 14631 à 14640 sur 16175


  • Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

  • Article dans une revue

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murtagh, J.C. Greer, M. Barbe, F. Bailly, Jacques Chevallier, S. Silvestre, D. Loridant-Bernard, E. Constant, M. Constant

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨hal-00149640⟩

  • Communication dans un congrès

32-QAM radio transmission over multimode fibre beyond the fiber bandwidth

D. Wake, Samuel Dupont, Jean-Pierre Vilcot, A.J. Seeds

2002, 4 pp. ⟨hal-00149639⟩

  • Communication dans un congrès

Techniques d'homogénéisation des composites à fibres actives

E. Lenglet, Anne-Christine Hladky, J.C. Debus, E. Deletombe

2002, pp.252-255. ⟨hal-00147775⟩

  • Article dans une revue

Development of a new ultrasonic technique for bone and biomaterials in vitro caracterization

Fabrice Lefebvre, Y. Deblock, Pierre Campistron, D.D. Ahite, Jean-Jacques Fabre

Journal of Biomedical Materials Research, 2002, 63, pp.441-446. ⟨hal-00149908⟩

  • Communication dans un congrès

Size effects in capped ceramic underwater sound projectors

R.E. Newnham, A. Dogan, D.C. Markley, J.F. Tressler, J. Zhang, E. Uzgur, R.J. Meyer, Anne-Christine Hladky, W.J. Hughes

2002, pp.2315-2321. ⟨hal-00147772⟩

  • Communication dans un congrès

Spectroscopie STM de semiconducteurs et de molécules organiques

D. Stievenard

Ecole Thématique de Porquerolles, 2002, Porquerolles, France. ⟨hal-00149688⟩

  • Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high…

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩