Publications

• Communication dans un congrès

2½ D microfabricated nib-like sources for nanoelectrospray applications

S. Le Gac, S. Arscott, C. Rolando

2003, pp.1211-1214. ⟨hal-00146442⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design…

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Communication dans un congrès

Arabic isolated word recognition using general regression neural network

A. Amrouche, Jean-Michel Rouvaen

2003, pp.689-692. ⟨hal-00154885⟩

• Article dans une revue

Formation of Pt-based silicide contacts : kinetics, stochiometry and current drive capabilities

Guilhem Larrieu, Emmanuel Dubois, X. Wallart, Xavier Baie, J. Katcki

A detailed analysis of the formation of Pt2Si and PtSi silicides is proposed, based on x-ray photoelectron spectroscopy ~XPS!, transmission electron microscopy ~TEM!, and electrical characterizations. Published kinetics of the Pt2Si and PtSi transformations under ultrahigh vacuum condition are…

Journal of Applied Physics, 2003, 94 (12), pp.7801-7810. ⟨10.1063/1.1605817⟩. ⟨hal-00146394⟩

• Communication dans un congrès

Finite volume methods for wave phase conjugation in active media

A. Merlen, P. Voinovitch, Vladimir Preobrazhensky, Philippe Pernod

6th International Conference on Mathematical and Numerical Aspects of Wave Propagation, WAVES 2003, 2003, Finland. pp.765-769. ⟨hal-00250177⟩

• Article dans une revue

Non-iterative bit-loading algorithm for ADSL-type DMT applications

Marie Zwingelstein, Marc G. Gazalet, M Gharbi

IEE Proceedings. Communications, 2003, 150, pp.414-418. ⟨hal-00146715⟩

• Communication dans un congrès

Low frequency noise behaviour in AlGaN/GaN HEMT's

Abdelali Rennane, Laurent Bary, Jean-Guy Tartarin, Y. Guhel, Christophe Gaquière, Jean-Claude de Jaeger, Z. Bougrioua, S. Delage, Jacques Graffeuil, Robert Plana

12th European Workshop on Heterostructure Technology, heTech 2003, 2003, San Rafael, Spain. ⟨hal-00146693⟩

• Communication dans un congrès

Optimisation des HEMTs AlGaN/GaN/Si

A. Minko, Virginie Hoel, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies

2003, pp.1D-12. ⟨hal-00146697⟩

• Autre publication scientifique

Etudes expérimentales de transistors HFET de la filière nitrure de gallium pour des applications de puissance hyperfréquences

N. Vellas

2003. ⟨hal-00146639⟩