Publications

• Communication dans un congrès

Diffusion d'un élement V à partir d'une surface d'un semiconducteur III-V, influence de la reconstruction et de la morphologie

C. Priester

Journées Surfaces et Interfaces, JSI 2002, 2002, Toulouse, France. ⟨hal-00149684⟩

• Article dans une revue

Interpretation and theory of tunneling experiments on single nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We discuss the interpretation of tunneling experiments on single molecules or semiconductor quantum dots weakly coupled to metallic electrodes. We identify the main features in the current-voltage curves and in the conductance using an extension of the theory of single charge tunneling. We analyze…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.165334/1-14. ⟨10.1103/PhysRevB.65.165334⟩. ⟨hal-00149663⟩

• Communication dans un congrès

Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology

M. Ardouin, B. Bonte, M. Zaknoune, Y. Cordier, S. Bollaert, D. Theron, Jean-Claude de Jaeger

25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia. ⟨hal-00149713⟩

• Communication dans un congrès

AlInAs/GaInAs HEMTs for power amplification at 60 GHz

M. Zaknoune, X. Wallart, F Medjdoub, M. Ardouin, B. Bonte, D. Theron, Jean-Claude de Jaeger

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States. ⟨hal-00149711⟩

• Communication dans un congrès

Caractérisation diélectrique en réflexion transmission de cristaux liquides en structure ligne plaquée

Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Jean-François Legier, Erick Paleczny, Mohamed Bouazaoui, Jean-Pierre Vilcot, Arnaud Beaurain, Stefan Mc Murtry, L. Dobrzynski

Actes des 7èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2002, 2002, Toulouse, France. ⟨hal-00149649⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction…

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-…

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩

• Article dans une revue

Improvement of LiNbO3 surface roughness by using a multi-step process : relation between optical and AFM analysis.

El Hadj Dogheche, X. Lansiaux, Denis Remiens

Integrated Ferroelectrics, 2002, 49, pp.211-219. ⟨hal-00149623⟩

• Communication dans un congrès

Theoretical and experimental determination of the natural and initial acoustoelastic coefficients

Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, Wei-Jiang Xu

2002, pp.1696-1702. ⟨hal-00149918⟩

• Communication dans un congrès

Non-linear magneto-acoustic phenomena near spin reorientation instability

Vladimir Preobrazhensky, Philippe Pernod

2002, pp.45-46. ⟨hal-00148691⟩