Publications

Affichage de 14761 à 14770 sur 16064


  • Communication dans un congrès

0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos

2002, pp.101-105. ⟨hal-00152950⟩

  • Chapitre d'ouvrage

Noise modeling and measurement techniques in deep submicron SOI devices

Francois Danneville, Gilles Dambrine

Balandin A. Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers, pp.355-365, 2002. ⟨hal-00577023⟩

  • Chapitre d'ouvrage

Growth of PbTiO3/Pb[Zr,Ti]O-3 heterostructures by sputtering on Si substrate : influence of a buffer layer on the structural and electrical properties of Pb[Zr,Ti]O-3

Denis Remiens

Pandalai S.G. Crystal growth in thin solid films - Control of epitaxy, Research Signpost, Kerala, India, pp.71-86, 2002. ⟨hal-00577027⟩

  • Chapitre d'ouvrage

Numerical modeling of sonic and ultrasonic devices

Bertrand Dubus

RANZ-GUERRA C., GALLEGO-JUAREZ J.A. New acoustics - Selected topics, Ed. Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain, pp.37-74, 2002. ⟨hal-00132554⟩

  • Article dans une revue

Monolithic coplanar transmission lines loaded by heterostructure barrier varactors for a 60 GHz tripler

M. Fernandez, E. Delos, X. Melique, S. Arscott, D. Lippens

IEEE Microwave and Wireless Components Letters, 2001, 11 (12), pp.498-500. ⟨10.1109/7260.974558⟩. ⟨hal-02347982⟩

  • Article dans une revue

Magneto-transport in asymmetric serial loop structures

H Al-Wahsh, A Mir, Abdellatif Akjouj, B Djafari-Rouhani, Leonard Dobrzynski

Physics Letters A, 2001, 291 (4-5), pp.333-337. ⟨10.1016/S0375-9601(01)00737-X⟩. ⟨hal-04070314⟩

  • Brevet

Dispositif formant micromoteur ou microactionneur

L. Buchaillot

N° de brevet: FR2809549 (A1). 2001. ⟨hal-00372673⟩