Publications

• Thèse

Monocouches organiques auto-assemblées pour la réalisation de diodes moléculaires, Organic self-assembled monolayers for molecular diodes

Stéphane Lenfant

Ce travail se situe dans le cadre des recherches en électronique moléculaire. Après une présentation des enjeux et des challenges, nous décrirons les principales réalisations dans ce domaine. Dans un premier temps, nous avons entrepris la réalisation par silanisation de monocouches autoassemblées…, This work concerns the general framework of molecular electronics. After the presentation of the stakes and the challenges, we describe the mainachievements in this field. First, we made self-assembled monolayers on silicon by silanization. These monolayers with various thicknesses (8, 14 and 17…

Science des matériaux [cond-mat.mtrl-sci]. Université de Lille 1, 2001. Français. ⟨NNT : ⟩. ⟨tel-01092344⟩

• Communication dans un congrès

The evolution of the concept of cycle : from common sense to an instrument of reasoning and mathematical calculation

Raffaele Pisano

IPE Symposium Common Sense in Philosophy and in Sciences, 8–9 November, IPE, Nov 2001, Napoli, Italy, Italy. ⟨hal-04519694⟩

• Article dans une revue

Spin-wave transport in serial loop structures

Abdellah Mir, Housni Al-Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur

The magnonic band gaps and the selective transmission in the serial loop structure (SLS), made of loops pasted together with segments of finite length, are investigated theoretically in the frame of the long-wavelength Heisenberg model. These monomode structures, composed of one-dimensional…

Physical Review B, 2001, 64 (22), ⟨10.1103/PhysRevB.64.224403⟩. ⟨hal-03302018⟩

• Article dans une revue

Second-order sound field during megasonic cleaning of patterned silicon wafers: Application to ridges and trenches

Jerome O. Vasseur, P. Deymier, J. Vasseur, A. Khelif, S. Raghavan

Journal of Applied Physics, 2001, 90 (8), pp.4211-4218. ⟨10.1063/1.1398595⟩. ⟨hal-03302022⟩

• Article dans une revue

Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals

Christophe Delerue, Guy Allan, Michel Lannoo

We show that it is possible to perform full microscopic calculations of the phonon-assisted and no-phonon radiative transitions in silicon nanocrystals. These are based on a tight-binding Hamiltonian for the electron and electron-phonon part together with a valence force-field model for phonons. We…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.193402/1-4. ⟨10.1103/PhysRevB.64.193402⟩. ⟨hal-00152538⟩

• Communication dans un congrès

Advanced Source/Drain Architecture using Very Low Schottky Barriers: Device Design and Material Engineering

Emmanuel Dubois, G. Larrieu

31st European Solid-State Device Research Conference, Sep 2001, Nuremberg, Germany. pp.203-206, ⟨10.1109/ESSDERC.2001.195236⟩. ⟨hal-04248570⟩

• Article dans une revue

Millimeter wave antennas with gaussian radiation patterns

Ronan Sauleau, Philippe Coquet, K. Shinohara, J.P. Daniel, N. Hirose, T. Matsui

IEICE Transactions on Communications, 2001, E84-B (9), 2395-2406 - 12 p. ⟨hal-00557664⟩

• Article dans une revue

Material optimisation for AlGaN/GaN HFET applications

Z. Bougrioua, I. Moerman, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, C. Humphreys

An optimisation of some growth parameters for the epitaxy of AlGaN–GaN based heterostructure field effect transistors (HFET) at low pressure in a new 3x2″ MOVPE reactor is presented. Some possible processes for the growth of semi-insulating buffers have been identified and are described. TEM…

Journal of Crystal Growth, 2001, 230 (3-4), pp.573-578. ⟨10.1016/S0022-0248(01)01303-3⟩. ⟨hal-02906506⟩

• Communication dans un congrès

Antennes millimétriques à faisceau gaussien

Ronan Sauleau, Philippe Coquet, J.P. Daniel

Optique Hertzienne et Diélectriques'01, Sep 2001, Le Mans, France. 217-220 - 4 p. ⟨hal-00557793⟩

• Brevet

Transistor MOS pour circuits à haute densité d'intégration

Emmanuel Dubois

N° de brevet: FR2805395 (A1). 2001. ⟨hal-00372674⟩