Publications

• Communication dans un congrès

Nonlinear noise modeling of a PHEMT device through residual phase noise and low frequency noise measurements

Olivier Llopis, J B Juraver, B. Tamen, Francois Danneville, M. Chaubet, A. Cappy, Jacques Graffeuil

The phase noise generated by a FET device is investigated using transmission and reflection residual phase noise measurements. This approach helps in locating, in the intrinsic device, the low frequency noise sources which are responsible for these phase fluctuations. On the basis of these…

IEEE International Microwave Symposium, May 2001, Phoenix, United States. pp.831-834. ⟨hal-02335357⟩

• Article dans une revue

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

J Harris, K Lee, T. Wang, S. Sakai, Z. Bougrioua, Ingrid Moerman, E Thrush, J Webb, Hao Tang, T Martin, Duncan Kennedy Maude, J-C Portal

Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, τq,…

Semiconductor Science and Technology, 2001, 16 (5), pp.402-405. ⟨10.1088/0268-1242/16/5/321⟩. ⟨hal-02906503⟩

• Article dans une revue

Stopping of acoustic waves by sonic polymer-fluid composites

Jerome O. Vasseur, Ph. Lambin, A. Khelif, L. Dobrzynski, Bahram Djafari-Rouhani

Physical Review E , 2001, 63 (6), ⟨10.1103/PhysRevE.63.066605⟩. ⟨hal-03302016⟩

• Article dans une revue

Electrical effects of SiNx deposition on GaN MESFETs

B. Boudart, Christophe Gaquière, Y. Guhel, Jean-Claude de Jaeger, M.A. Poisson

The electrical effects of SiNx deposition on GaN MESFETs have been investigated. Significant effects induced from the dielectric coating have been observed depending on the temperature deposition used in the technological process. A power density increase of 30% has been observed after the device…

Electronics Letters, 2001, 37 (8), pp.527 - 528. ⟨10.1049/el:20010324⟩. ⟨hal-02936046⟩

• Article dans une revue

Experimental and Theoretical Evidence for the Existence of Absolute Acoustic Band Gaps in Two-Dimensional Solid Phononic Crystals

Jerome O. Vasseur, J. Vasseur, P. Deymier, B. Chenni, Bahram Djafari-Rouhani, L. Dobrzynski, D. Prevost

Physical Review Letters, 2001, 86 (14), pp.3012-3015. ⟨10.1103/PhysRevLett.86.3012⟩. ⟨hal-03302013⟩

• Article dans une revue

Gab1 phosphorylation: a novel mechanism for negative regulation of HGF receptor signaling

Philippe Gual, Stefano Giordano, S Anguissola, Pj Parker, Pm Comoglio

Signal transduction by HGF receptor, the tyrosine kinase encoded by the MET oncogene, switches on a genetic program called 'invasive growth' inducing epithelial cell dissociation, migration, growth, and ultimately leading to differentiation into branched tubular structures. Sustained…

Oncogene, 2001, 20 (2), pp.156-166. ⟨10.1038/sj.onc.1204047⟩. ⟨hal-04496823⟩

• Article dans une revue

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface

B. Grandidier, Jean-Philippe Nys, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, Pierre Frere, Phillippe Blanchard, Jean Roncali

The adsorption of thienylenevinylene oligomers on the Si(100) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene…

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473 (1-2), pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00688535⟩

• Article dans une revue

Free-carrier mobility in GaN in the presence of dislocation walls

J.-L. Farvacque, Z. Bougrioua, I. Moerman

The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp transition separating a low- from a high-mobility regime. This separation…

Physical Review B, 2001, 63 (11), ⟨10.1103/PhysRevB.63.115202⟩. ⟨hal-02906502⟩

• Thèse

Études pour la réalisation d'un modulateur électro-optique à ondes progressives sur polymères, Studies for the development of a polymer-based traveling-wave electro-optic modulator

Jean-François Larchanché

Le modulateur électro-optique à ondes progressives est un bon candidat pour la modulation à haute fréquence. Une revue des différents types de modulateurs sur niobate de lithium et sur semi-conducteur III-V met en relief les bénéfices de l'utilisation d'une ligne microruban et la…, The traveling-wave electro-optic modulator is a strong candidate for high-frequency modulation. A review of various modulator types based on lithium niobate and III-V semiconductors highlights the benefits of using a microstrip line and the necessity of using a material better suited for this…

Sciences de l'ingénieur [physics]. Université des sciences et technologies de Lille, 2001. Français. ⟨NNT : ⟩. ⟨tel-05437557⟩

• Communication dans un congrès

Inter-vehicule communication based on ultra-wide band and CDMA techniques

F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, M. Heddebaut

2001, pp.959-961. ⟨hal-00152927⟩