Publications

• Communication dans un congrès

Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

F Medjdoub, D. Theron, F. Dessenne, R. Fauquembergue, Jean-Claude de Jaeger

2002, pp.57-62. ⟨hal-00149710⟩

• Communication dans un congrès

Matching of ultrasonic transducer : interest of the glue layer

Dorothée Debavelaere-Callens, C. Bruneel, Jamal Assaad

2002, pp.2408. ⟨hal-00149910⟩

• Article dans une revue

Interpretation and theory of tunneling experiments on single nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We discuss the interpretation of tunneling experiments on single molecules or semiconductor quantum dots weakly coupled to metallic electrodes. We identify the main features in the current-voltage curves and in the conductance using an extension of the theory of single charge tunneling. We analyze…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.165334/1-14. ⟨10.1103/PhysRevB.65.165334⟩. ⟨hal-00149663⟩

• Communication dans un congrès

Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

S. Grenier, A. Letoublon, M.G. Proietti, Hubert Renevier, L. Gonzalez, J.M. Garcia, C. Priester, J. Garcia

2002, pp.24-33. ⟨hal-00149685⟩

• Article dans une revue

Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Thierry Melin, Vincent Senez, Didier Stiévenard

We report the self-formation of nanometer-size silicon islands on a silicon-on-insulator (SOI) substrate that is associated with simple thermal treatment in the range of 500–900 °C. We study the island formation process versus the temperature of the thermal annealing, the thickness of the top…

Journal of Applied Physics, 2002, 91, pp.106-111. ⟨10.1063/1.1420761⟩. ⟨hal-00149668⟩

• Communication dans un congrès

Diffusion d'un élement V à partir d'une surface d'un semiconducteur III-V, influence de la reconstruction et de la morphologie

C. Priester

Journées Surfaces et Interfaces, JSI 2002, 2002, Toulouse, France. ⟨hal-00149684⟩

• Communication dans un congrès

Modélisation numérique et caractérisation expérimentale du champ de cavitation ultrasonore

P. Mosbah, Bertrand Dubus, O. Ledez, C. Campos-Pozuelo, C. Granger

2002, pp.747-750. ⟨hal-00147777⟩

• Article dans une revue

Fast electromagnetic characterization method of film-shaped materials using coplanar up to V-band

J. Hinojosa, K. Lmimouni, Gilles Dambrine

Electronics Letters, 2002, 38, pp.373-374. ⟨hal-00147838⟩

• Communication dans un congrès

Solid-state 8 GHz transient signal digitizer characterization

A. Ghis, P. Ouvrier-Buffet, N. Rolland, A. Benlarbi-Delai, P.A. Rolland, D. Glay, D. Jaeger

2002, pp.1673-1676. ⟨hal-00148329⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction…

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩