Publications
Affichage de 14981 à 14990 sur 16458
Some rules for the choice of the C(V) characteristic for the design of frequency triplers with symmetrical varactors
J.M. Duchamp, Philippe Ferrari, J.W. Tao, D. Lippens
IEEE MTT-S International Microwave Symposium, Jun 2002, Seattle (WA), United States. pp.359-362. ⟨hal-00250211⟩
Influence of the step covering on fatigue phenomenon for polycrystalline silicon micro-electro-mechanical-systems (MEMS)
O. Millet, Bernard Legrand, D. Collard, L. Buchaillot
Japanese Journal of Applied Physics, part 2 : Letters, 2002, 41, pp.L1339-L1341. ⟨hal-00250391⟩
S. Carnot’s Réflexions: a theory based on non–classical Logic
Antonino Drago, Raffaele Pisano
Bulletin of Symbolic Logic, 2002, 8 (131), pp.131-132. ⟨hal-04508058⟩
Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs
Y. Guhel, B. Boudart, Virginie Hoel, M. Werquin, Christophe Gaquière, Jean-Claude de Jaeger, M.A. Poisson, I. Daumiller, E. Kohn
Microwave and Optical Technology Letters, 2002, 34, pp.4-6. ⟨hal-00149695⟩
Very high broadband electromagnetic characterization method of film-shaped materials using coplanar
J. Hinojosa, K. Lmimouni, Sylvie Lepilliet, Gilles Dambrine
Microwave and Optical Technology Letters, 2002, 33, pp.352-355. ⟨hal-00147839⟩
Design of optimal configuration for generating A0 Lamb mode in a composite plate using piezoceramic transducers
Sébastien Grondel, Christophe Paget, Christophe Delebarre, Jamal Assaad, K. Levin
Journal of the Acoustical Society of America, 2002, 112, pp.84-90. ⟨hal-00149900⟩
Supercritical parametric phase conjugation of ultrasound. Numerical simulation of nonlinear and non-stationary mode
A. Merlen, Vladimir Preobrazhensky, Philippe Pernod
Journal of the Acoustical Society of America, 2002, 112, pp.2656-2665. ⟨hal-00148688⟩
Outils théoriques pour la structure électronique
Christophe Delerue, Guy Allan, Michel Lannoo, Christophe Krzeminski, Yann-Michel Niquet
Ecole thématique sur les nitrures, 2002, La Plagne, France. ⟨hal-00149679⟩
Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor
E. Lefebvre, M. Zaknoune, F. Mollot
14th Indium Phosphide and Related Materials Conference, IPRM 2002, 2002, Sweden. pp.615-618. ⟨hal-00250210⟩