Publications

• Article dans une revue

Millimeter wave antennas with gaussian radiation patterns

Ronan Sauleau, Philippe Coquet, K. Shinohara, J.P. Daniel, N. Hirose, T. Matsui

IEICE Transactions on Communications, 2001, E84-B (9), 2395-2406 - 12 p. ⟨hal-00557664⟩

• Article dans une revue

Static measurements of GaN MESFETs on (111) Si substrates

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm…

Electronics Letters, 2001, 37 (17), pp.1095 - 1096. ⟨10.1049/el:20010740⟩. ⟨hal-02936047⟩

• Communication dans un congrès

S. Carnot’s Réflexions: a theory based on non–classical Logic

Raffaele Pisano

International ASL Logic Colloquium 2001, Wien, 6–11 August, Association for Symbolic Logic, Aug 2001, Wien, Austria, Austria. ⟨hal-04519710⟩

• Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q−3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight-binding techniques. The rectification current depends not only on…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.085405/1-6. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00152558⟩

• Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, R. Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q-3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight binding techniques. The rectification current depends on the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64 (8), pp.085405. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00604397⟩

• Proceedings/Recueil des communications

Photonic tunneling between two wires

Leonard Dobrzynski

Progress in Surface Science, 67 (1-8), pp.347-354, 2001, ⟨10.1016/S0079-6816(01)00035-1⟩. ⟨hal-04070883⟩

• Article dans une revue

Surface states in one-dimensional photonic band gap structures

B Djafari-Rouhani, E.H El Boudouti, Abdellatif Akjouj, Leonard Dobrzynski, J.O Vasseur, A Mir, N Fettouhi, J Zemmouri

Vacuum, 2001, 63 (1-2), pp.177-183. ⟨10.1016/S0042-207X(01)00188-9⟩. ⟨hal-04069889⟩

• Communication dans un congrès

Sadi Carnot’s Thermodynamics and Electricity Theory

Raffaele Pisano

XXI SISFA International Congress of the history of physics and Astronomy, 7-9 June, SISFA & Department of Physics, University of Calabria, Jun 2001, Cosenza, Italy. ⟨hal-04519716⟩

• Article dans une revue

A 0.15µm 60GHz high-power composite channel GaInAs/InP HEMT with low gate current

Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron

This letter presents recent improvements and experimental results provided by GaInAs/InP composite channel high electron mobility transistors (HEMT). The devices exhibit good dc and rf performance. The 0.15-μm gate length devices have saturation current density of 750 mA/mm at V/sub GS/=+0 V. The…

IEEE Electron Device Letters, 2001, 22 (6), pp.257-259. ⟨10.1109/55.924834⟩. ⟨hal-00152592⟩

• Article dans une revue

Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement

Mustafa Boudrissa, Elisabet Delos, Christophe Gaquière, Michel Rousseau, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

This paper exhibits experimental and theoretical results on metamorphic high-electron mobility transistor (MM-HEMT). Modeling and measurements provide a better knowledge of device physics which allows us to optimize device structures. We present 10-GHz power performances, pulse and gate…

IEEE Transactions on Electron Devices, 2001, 48 (6), pp.1037-1044. ⟨10.1109/16.925223⟩. ⟨hal-00152595⟩