Publications

Affichage de 15161 à 15170 sur 16104


  • Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate…

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

  • Communication dans un congrès

Organic thin film transistors with ferroelectric gate oxide

S. Queste, G. Velu, K. Lmimouni, D. Vuillaume, A. Chapoton, C. Legrand, Denis Remiens

7th European Conference on Molecular Electronics, 2001, Kerkrade, Netherlands. ⟨hal-00152183⟩

  • Article dans une revue

Micromachined electromechanical devices for integrated wireless communication transceivers : the IST MELODICT project

A. Kaiser

MST News, 2001, 2, pp.7-8. ⟨hal-00152200⟩

  • Article dans une revue

Very low-voltage digital-audio sigma delta modulator with 88 dB dynamic range using local switch bootstrapping

M. Dessouki, A. Kaiser

IEEE Journal of Solid-State Circuits, 2001, 36, pp.349-355. ⟨hal-00152201⟩

  • Communication dans un congrès

SAW characteristics in a layered ZnO/GaAs structure for design of integrated SAW filters

V. Zhang, Fabrice Lefebvre, Tadeusz Gryba

2001, pp.261-264. ⟨hal-00151743⟩

  • Autre publication scientifique

Radar anticollision à corrélation : étude et réalisation

M. Saint-Venant

2001. ⟨hal-00162700⟩

  • Article dans une revue

Evidence of laser wavelength effect in picosecond ultrasonics : possible connection to interband transitions

Arnaud Devos, Catherine Lerouge

Physical Review Letters, 2001, 86, pp.2669-2672. ⟨hal-00151688⟩

  • Autre publication scientifique

Modélisation par éléments finis du comportement des alliages à mémoire de forme

S. Rafanomezantsoa

2001. ⟨hal-00151684⟩

  • Communication dans un congrès

Power LDMOS design using an SOI RESURF architecture : on state / breakdown voltage trade-off

Emmanuel Dubois, K. Suzuki, E. Lampin

Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152238⟩