Publications

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate…

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

• Article dans une revue

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface

B. Grandidier, J.P. Nys, D. Stievenard, Christophe Krzeminski, C. Delerue, P. Frere, P. Blanchard, J. Roncali

The adsorption of thienylenevinylene oligomers on the Si(1 0 0) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene…

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473, 1-2, pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00018576⟩

• Article dans une revue

Tight binding for complex semiconductor systems

Christophe Delerue, Michel Lannoo, Guy Allan

In this review, we illustrate multiple aspects of the application of the empirical tight binding (ETB) approximation. We begin by summarizing the general principles of ETB where the Hamiltonian matrix is written in a restricted atomic basis set and in terms of a relatively limited number of…

physica status solidi (b), 2001, 227, 1, pp.115-149. ⟨10.1002/1521-3951(200109)227:13.0.CO;2-2⟩. ⟨hal-00018572⟩

• Ouvrages

Special issue on advances and applications in microwave and millimeter wave nondestructive evaluation

T. Lasri, R. Zoughi

Kluwer Academic/Plenum Publishers, Subsurface Sensing Technologies and Applications, 2, 4, 343-473, 2001. ⟨hal-00577047⟩

• Communication dans un congrès

Etude par spectroscopie Raman de la décomplexation photoinduite du matériau GaAs hydrogéné

Arnaud Beaurain, A. Lorriaux-Rubbens, M. Constant, S. Silvestre, D. Loridant-Bernard

8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, Jan 2001, Aussois, France. ⟨hal-00152510⟩

• Communication dans un congrès

Acousto-optic separator for stereoscopic laser videoprojection

Jean-Claude Kastelik, A. Sakkour, Michel Pommeray, Marc G. Gazalet

2001, pp.485-488. ⟨hal-00151738⟩

• Communication dans un congrès

Intégration des filtres à ondes de surface pour les systèmes GSM

A. Haddou, Tadeusz Gryba, Jean-Etienne Lefebvre, Véronique Sadaune, V. Zhang

Journées Nationales du Réseau Doctoral de Microélectronique, 2001, Strasbourg, France. ⟨hal-00151739⟩

• Communication dans un congrès

Transmission lines on low resistivity silicon substrate for MMICs applications

G. Six, M. Vanmackelberg, H. Happy, Gilles Dambrine, S. Boret, D. Gloria

2001, pp.193-196. ⟨hal-00151781⟩

• Article dans une revue

Resonant tunneling in partially disordered silicon nanostructures

Leonid Tsybeskov, G.F. Grom, Rahul G. Krishnan, Laurent Montès, P.M. Fauchet, D. Kovalev, J. Diener, Victor Timoshenko, F. Koch, John P. Mccaffrey, Jean-Marc Baribeau, G.I. Sproule, David J. Lockwood, Yann-Michel Niquet, Guy Allan, Christophe Delerue

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on…

EPL - Europhysics Letters, 2001, 55, pp.552-558. ⟨10.1209/epl/i2001-00451-1⟩. ⟨hal-00250423⟩

• Article dans une revue

Mechanical properties of diamond films : a comparative study of polycrystalline and smooth fine-grained diamonds by Brillouin light scattering

P. Djemia, C. Dugautier, T. Chauveau, El Hadj Dogheche, M.I. de Barros, L. Vandenbulcke

Journal of Applied Physics, 2001, 90, pp.3771-3779. ⟨hal-00250413⟩