Publications

• Article dans une revue

PbZr0.52Ti0.48O3 and SrBi2Nb2O9 ferroelectric oxides integrated with YBa2Cu3O7 superconductor in multilayers epitaxially grown by pulsed laser deposition

Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, Caroline Soyer, Eric Cattan, Denis Remiens, A. Dauscher, Sébastien J. Weber, B. Lenoir

Multilayers of PbZr0.52Ti0.48O3 (PZT) or SrBi2Nb2O9 (SBN) ferroelectrics (F) and YBa2Cu3O7 (YBaCuO) superconductor (S) have been grown by pulsed laser deposition. F/S or S/F bilayers as well as S/F/S trilayers deposited on SrTiO3 and MgO were epitaxially grown, as evidenced by x-ray diffraction (…

Journal de Physique IV Proceedings, 2001, International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures, 11 (PR11), pp.29-33. ⟨10.1051/jp4:20011104⟩. ⟨hal-00152480⟩

• Article dans une revue

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, A. Dauscher, Sébastien J. Weber, B. Lenoir, Caroline Soyer, Eric Cattan, Denis Remiens

Journal de Physique IV Proceedings, 2001, 11, pp.133-137. ⟨hal-00152481⟩

• Chapitre d'ouvrage

HEMT's capability for millimeter-wave applications

S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, A. Cappy

NEY M. Millimeter waves in communication systems, Hermès, pp.15-26, 2001. ⟨hal-00132930⟩

• Chapitre d'ouvrage

High Performance Heterostructure Barrier Varactors

Didier Lippens, Xavier Mélique, S. Arscott, Thibaut David, V. Duez, Jorge Carbonell, Patrick Mounaix, Olivier Vanbésien, Francis Mollot

We report on the physics, fabrication technology and characterisation of high performance Heterostructure Barrier Varactors diodes. State-of-the art results in terms of capacitance ratios of up to 10:1 and voltage handling have recently been published for InP-and GaAs-based devices with a typical…

MILES R.E., HARRISON P., LIPPENS D. Terahertz Sources and Systems, Springer Netherlands, pp.53-67, 2001, 978-94-010-0824-2. ⟨10.1007/978-94-010-0824-2_4⟩. ⟨hal-02348008⟩

• Communication dans un congrès

Laser ultrasonics characterization of surface residual stresses in steel rods

M.L. Qian, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Mohamed Ourak

2001, pp.1487-1493. ⟨hal-00157810⟩

• Thèse

Contribution à l’optimisation du contrôle santé intégré par ondes de Lamb : application à la surveillance de structures aéronautiques, Optimization of Lamb wave based health monitoring systems for aeronautical structure inspection

Sébastien Grondel

Ce travail est consacré à l'étude et à la mise au point d'un système de surveillance embarqué destiné au contrôle santé de structures aéronautiques. Le système choisi pour réaliser ce « contrôle santé intégré » repose, d'une part, sur l'excitation et la réception d'ondes de…, This work is devoted to the study and the development of an health monitoring system assigned to aircraft applications. The chosen health monitoring system is based first on the excitation and reception of Lamb waves along the structure and secondly on a continuous monitoring with the same…

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2000. Français. ⟨NNT : 2000VALE0030⟩. ⟨hal-00159072⟩

• Article dans une revue

Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls

J-L Farvacque, Z. Bougrioua, I Moerman

Journal of Physics: Condensed Matter, 2000, 12 (49), pp.10213-10221. ⟨10.1088/0953-8984/12/49/321⟩. ⟨hal-02906495⟩

• Article dans une revue

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

A Stafford, S.J.C Irvine, Z. Bougrioua, K. Jacobs, I Moerman, E.J Thrush, L Considine

Journal of Crystal Growth, 2000, 221 (1-4), pp.142-148. ⟨10.1016/S0022-0248(00)00674-6⟩. ⟨hal-02906485⟩

• Article dans une revue

Streaming and removal forces due to second-order sound field during megasonic cleaning of silicon wafers

Jerome O. Vasseur, P. Deymier, J. Vasseur, A. Khelif, Bahram Djafari-Rouhani, L. Dobrzynski, S. Raghavan

Journal of Applied Physics, 2000, 88 (11), pp.6821-6835. ⟨10.1063/1.1323521⟩. ⟨hal-03301993⟩

• Article dans une revue

Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage

Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices have saturation current density of 355 mA/mm at +0.6 V gate-to-source…

IEEE Electron Device Letters, 2000, 21 (11), pp.512-514. ⟨10.1109/55.877193⟩. ⟨hal-00158983⟩