Publications

• Communication dans un congrès

Inductance effect in interconnect coupling noise

Gregory Servel, Fabrice Huret, Erick Paleczny, Jean-François Legier, Denis Deschacht

2001, pp.59-60. ⟨hal-00152487⟩

• Article dans une revue

Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapour deposition method

P. Thevenin, A. Soltani, A. Bath

Journal de Physique IV Proceedings, 2001, 11, pp.803-810. ⟨hal-00152634⟩

• Communication dans un congrès

70nm gate InP-based HEMTs with high ft and fmax

T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

11th European Heterostructure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00151776⟩

• Autre publication scientifique

Contribution à la caractérisation hyperfréquence de composants MOSFET en vue de la conception de fonctions intégrées pour des applications en gamme millimétrique

M. Vanmackelberg

2001. ⟨hal-00151765⟩

• Article dans une revue

Femtosecond measurement of electron capture and intersubband relaxation in self-organized InAs quantum wires on In1-xAlxAs/InP

Emmanuel Peronne, T. Polack, Jean-Francois Lampin, F. Fossard, F. Julien, J. Brault, M. Gendry, O. Marty, Antigoni Alexandrou

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63, pp.081307/1-4. ⟨hal-00250404⟩

• Article dans une revue

Modeling and underwater characterization of cymbal transducers and arrays

J. Zhang, Anne-Christine Hladky, W.J. Hughes, R. Newnham

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2001, 48, pp.560-568. ⟨hal-00151690⟩

• Autre publication scientifique

Radar anticollision à corrélation : étude et réalisation

M. Saint-Venant

2001. ⟨hal-00162700⟩

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate…

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

• Communication dans un congrès

An efficient modelling of the impulse response of the indoor power line communication channels in high frequency range

Patrick Corlay, François-Xavier Coudoux, Marc G. Gazalet, F. Ruolt, F. Haine

2001, pp.149-154. ⟨hal-00152914⟩

• Communication dans un congrès

Shape memory alloys for microsystems

I. Roch, P. Delobelle, X. Wallart, D. Collard, L. Buchaillot

2001, pp.417-422. ⟨hal-00152468⟩