Publications

• Communication dans un congrès

L'interface physique biologie

D. Stievenard

Journées Micro et Nanotechnologies, 2001, Paris, France. ⟨hal-00152581⟩

• Autre publication scientifique

Modélisation par éléments finis du comportement des alliages à mémoire de forme

S. Rafanomezantsoa

2001. ⟨hal-00151684⟩

• Communication dans un congrès

Structural and electronic studies of InAs quantum dots embedded in GaAs by scanning tunneling microscopy

B. Grandidier

Alaska Meeting on Fundamental Optical Properties in Semiconductors, 2001, Girdwood, AK, United States. ⟨hal-00152583⟩

• Communication dans un congrès

An efficient modelling of the impulse response of the indoor power line communication channels in high frequency range

Patrick Corlay, François-Xavier Coudoux, Marc G. Gazalet, F. Ruolt, F. Haine

2001, pp.149-154. ⟨hal-00152914⟩

• Article dans une revue

Modeling and underwater characterization of cymbal transducers and arrays

J. Zhang, Anne-Christine Hladky, W.J. Hughes, R. Newnham

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2001, 48, pp.560-568. ⟨hal-00151690⟩

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate…

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

• Article dans une revue

Resonant tunneling in partially disordered silicon nanostructures

Leonid Tsybeskov, G.F. Grom, Rahul G. Krishnan, Laurent Montès, P.M. Fauchet, D. Kovalev, J. Diener, Victor Timoshenko, F. Koch, John P. Mccaffrey, Jean-Marc Baribeau, G.I. Sproule, David J. Lockwood, Yann-Michel Niquet, Guy Allan, Christophe Delerue

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on…

EPL - Europhysics Letters, 2001, 55, pp.552-558. ⟨10.1209/epl/i2001-00451-1⟩. ⟨hal-00250423⟩

• Article dans une revue

Mechanical properties of diamond films : a comparative study of polycrystalline and smooth fine-grained diamonds by Brillouin light scattering

P. Djemia, C. Dugautier, T. Chauveau, El Hadj Dogheche, M.I. de Barros, L. Vandenbulcke

Journal of Applied Physics, 2001, 90, pp.3771-3779. ⟨hal-00250413⟩

• Article dans une revue

Lattice model for ferroelectric thin film materials including surface effects : investigation on the depolarizing field properties

Laurent Baudry, Jérôme Tournier

Ferroelectric properties of thin film materials like lead zirconate titanate differ from those observed for bulk material. It is well known that the surface can strongly influence phase transition phenomena. By the use of a thermodynamical approach, very similar to those generally used to describe…

Journal of Applied Physics, 2001, 90, pp.1442-1454. ⟨10.1063/1.1375019⟩. ⟨hal-00250415⟩

• Article dans une revue

Tight binding for complex semiconductor systems

Christophe Delerue, Michel Lannoo, Guy Allan

In this review, we illustrate multiple aspects of the application of the empirical tight binding (ETB) approximation. We begin by summarizing the general principles of ETB where the Hamiltonian matrix is written in a restricted atomic basis set and in terms of a relatively limited number of…

physica status solidi (b), 2001, 227, 1, pp.115-149. ⟨10.1002/1521-3951(200109)227:13.0.CO;2-2⟩. ⟨hal-00018572⟩