Publications

• Article dans une revue

Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics

Jacopo Oswald, Davide Beretta, Michael Stiefel, Roman Furrer, Sebastian Lohde, Dominique Vuillaume, Michel Calame

Among the family of 2D materials, graphene is the ideal candidate as top or interlayer electrode for hybrid van der Waals heterostructures made of organic thin films and 2D materials due to its high conductivity and mobility and its inherent ability of forming neat interfaces without diffusing in…

ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.3c01090⟩. ⟨hal-04105099⟩

• Article dans une revue

Wide-Temperature-Range Flexible Micro-Supercapacitors Using Liquid Crystal Gel Electrolyte

Min Li, Chen Jia, Yurdanur Türker, Mert Umut Özkaynak, Libo Zhao, Danyu Zhang, Yunyun Luo, Guoxi Luo, Lu Wang, Yong Xia, Zhikang Li, Nan Zhu, Ping Yang, Koray Bahadır Dönmez, Rabah Boukherroub, Zhuangde Jiang

In this work, to construct a sunlight-powered energy storage system, single wall carbon nanotubes (SWCNTs)-based symmetric micro-supercapacitors (MSCs) were fabricated by a one-step, facile spraying method. The electrodes exhibited satisfactory conductivity with a sheet resistance of 275 Ω/sq.…

ACS Applied Energy Materials, 2023, 6 (10), pp.5230-5238. ⟨10.1021/acsaem.3c00144⟩. ⟨hal-04130827⟩

• Communication dans un congrès

Machine Learning-Based Monostatic Microwave Radar for Building Material Classification

Nawal Alsaleh, Denis Pomorski, Mohamed Sebbache, Kamel Haddadi

2023 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), May 2023, Kuala Lumpur, Malaysia. pp.1-5, ⟨10.1109/I2MTC53148.2023.10176071⟩. ⟨hal-04182234⟩

• Article dans une revue

Effects of stochastic forces on the nonlinear behaviour of a silicon nitride membrane nanoelectromechanical resonator

Sri Saran Venkatachalam, Xin Zhou

In this work, we present the effects of stochastic force generated by white noise on the nonlinear dynamics of a circular silicon nitride membrane. By tuning the membrane to the Duffing nonlinear region, detected signals switching between low- and high-amplitudes have been observed. They are…

Nanotechnology, 2023, 34 (21), pp.215202. ⟨10.1088/1361-6528/acbeb0⟩. ⟨hal-04007442⟩

• Communication dans un congrès

Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy

Caroline Elias, Sebastien Chenot, Florian Bartoli, Seif El-Whibi, Jean-Claude de Jaeger, Marie Lesecq, Maxime Hugues, Yvon Cordier

In this work, the electrical properties of ScAlN/GaN high electron mobility transistor (HEMT) heterostructures grown by ammonia source molecular beam epitaxy are studied. The effect of growth temperature and ScAlN barrier thickness on 2DEG carrier density is investigated with capacitance-voltage…

Wocsdice - Exmatec 2023 Conference, May 2023, Palermo, Italy. ⟨hal-04444068⟩

• Communication dans un congrès

Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications

Elodie Carneiro, Stéphanie Rennesson, Fabrice Semond, F Medjdoub

In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical characteristics of these structures for 100 nm gate length show a higher…

46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438164⟩

• Communication dans un congrès

An aggregator-less distributed smart sensor network with selective data exchange

Mathieu Chêne, Benoit Larras, Antoine Frappé, Andreas Kaiser

Sensor Networks (SN) could be defined as networks of autonomous devices that can sense and/or act on physical or environmental conditions cooperatively. In sensor networks, data is typically sensed and sent to an aggregator that w ill process it with local AI or send it to a cloud with larger AI.…

2023 IEEE International Symposium on Circuits and Systems (ISCAS), May 2023, Monterey, United States. pp.1-5, ⟨10.1109/ISCAS46773.2023.10181765⟩. ⟨hal-04189293⟩

• Communication dans un congrès

High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes

Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, F Medjdoub

We report on high drift layer quality in vertical PIN diodes grown on silicon substrate combining low Ron = 0.35 mΩ.cm², and high critical electric field of 1.82 MV/cm. The impact of the drift region thickness on the device performances shows an excellent breakdown scaling with 640 V / 820 V for 3.…

46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438189⟩

• Communication dans un congrès

A Very Low Power 12 bit 64-MS/s 2 step SAR Assisted Bidirectional Digital Slope ADC

Jean-Baptiste Casanova, Danika Perrin, Sandrine Nicolas, Andreas Kaiser

This paper presents a novel architecture of a SAR assisted 2 step ADC where the SAR residue is quantized with a bidirectional digital slope time-based converter. The bidirectional slope halves the conversion time of the second stage. Furthermore, the redundancy requirements in the second stage are…

2023 IEEE International Symposium on Circuits and Systems (ISCAS), May 2023, Monterey, United States. ⟨10.1109/ISCAS46773.2023.10181656⟩. ⟨hal-04189090⟩

• Communication dans un congrès

Pushing Q-band power performances by means of buffer engineering in AlN-GaN HEMTs

Kathia Harrouche, François Grandpierron, Lyes Ben-Hammou, Etienne Okada, F Medjdoub

We report on AlN/GaN HEMT technology for millimetre-wave applications with various buffer architectures. A high carbondoped buffer enables high electron confinement at the expense of trapping effects, which is attributed to the enhanced point defects and dangling bonds when using higher carbon…

46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438176⟩