Publications

• Communication dans un congrès

On 2D/3D numerical oxidation modeling : calibration and investigation of silicon crystal orientation effect on stresses in shallow trench isolations

T. Hoffmann, K.F. Dombrowski, V. Senez

2000, pp.59-62. ⟨hal-00158513⟩

• Communication dans un congrès

Very low-voltage fully differential amplifier for switched capacitor applications

M. Dessouky, A. Kaiser

2000, pp.441-444. ⟨hal-00158508⟩

• Communication dans un congrès

Organic semiconductors : application to light emitting diodes and thin film transistors

K. Lmimouni

Université de Rome Tor Vergata, 2000, Roma, Italy. ⟨hal-00158483⟩

• Communication dans un congrès

Non linear magneto-acoustic excitations in rare-earth multilayer structures

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef

The results presented in this paper clearly show the efficiency of nonlinear driving of a planar structure by means of magnetostrictive multilayers near the spin reorientation transition point. The nonlinear effects can be used for low frequency driving of various micromechanical and micro-opto-…

IEEE Ultrasonics Symposium. Proceedings. An International Symposium, Oct 2000, San Juan, PR, United States. pp.847-850, ⟨10.1109/ULTSYM.2000.922675⟩. ⟨hal-00158460⟩

• Communication dans un congrès

Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system

X. Wallart, D. Deresmes, F. Mollot

2000, pp.231-234. ⟨hal-00158442⟩

• Communication dans un congrès

Excitonic and quasiparticle gaps in Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to…

CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158952⟩

• Communication dans un congrès

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content

Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy

2000, pp.102-105. ⟨hal-00159005⟩

• Communication dans un congrès

AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT

M. Zaknoune, O. Schuler, X. Wallart, S. Piotrowicz, F. Mollot, D. Theron, Y. Crosnier

2000, pp.353-356. ⟨hal-00159004⟩

• Communication dans un congrès

STM studies of organic molecules on Si(100) : what can we learn ?

D. Stievenard

Research Conference on Manipulation of Individual Atoms and Molecules, 2000, Les Houches, France. ⟨hal-00158964⟩

• Autre publication scientifique

Conception, réalisation et caractérisation de transistors à effet de champ et d'amplificateurs pour des applications de puissance à haute linéarité en bandes K et Ka

X. Hue

2000. ⟨hal-00158969⟩