Publications

• Communication dans un congrès

Investigation of FET's avalanche breakdown phenomenon by means of a 2 D hydrodynamic energy model

Michel Rousseau, M. El Khou, Jean-Claude de Jaeger

12th III-V Semiconductor Device Simulation Workshop, 2000, Duisburg, Germany. ⟨hal-00159028⟩

• Communication dans un congrès

On temporal characterization and behavioural modelisation of non linear radar function

F. Graux, F. Dhondt, C. Tolant, P. Eudeline, B. Bonte, Y. Crosnier

GHz 2000, 2000, Goteborg, Sweden. ⟨hal-00159029⟩

• Autre publication scientifique

Optimisation de modems VDSL

R. Radhouane

2000. ⟨hal-00159049⟩

• Communication dans un congrès

Réalisation technologique d'un transistor à effet de champ dans la filière GaN

B. Boudart

Ecole Thématique sur les Nitrures d'Elemants III, 2000, Orcières-Merlette, France. ⟨hal-00159050⟩

• Article dans une revue

Signal-processing methods for analysing the structure of carbon-epoxy-resin composite materials

K. Harrouche, Jean-Michel Rouvaen, Mohammadi Ouaftouh, Mohamed Ourak, F. Haine

Measurement Science and Technology, 2000, 11, pp.285-290. ⟨hal-00159068⟩

• Autre publication scientifique

Nature des liaisons dans des familles de chalcogenures à maille complexe

Isabelle Lefebvre

2000. ⟨hal-00158963⟩

• Communication dans un congrès

Intermodulation load pull measurement in the 26-40 GHz bandwidth

Christophe Gaquière, Frédéric Bue-Erkmen, Pascal Delemotte, Yves Crosnier

30th European Microwave Week, 2000, Paris, France. ⟨hal-00159051⟩

• Communication dans un congrès

Influence of the quater wave matching layers on the response of bar transducers

B. Cugnet, Jamal Assaad, Anne-Christine Hladky, F. Haine

2000, pp.1135-1138. ⟨hal-00159075⟩

• Communication dans un congrès

Influence of recess and epilayers in the 26-40 GHz band HEMT's intermodulation

Frédéric Bue-Erkmen, Christophe Gaquière, X. Hue, B. Boudart, Yves Crosnier, Jean-Claude de Jaeger, Bernard Carnez, D. Pons

The comparison of the linearity performance for three PHEMTs have been investigated in Ka band. The studied transistors are a single recessed PHEMT, a double recessed PHEMT and a double recessed dual channel PHEMT. The main result is : at a given output power level, the double recess allows a large…

30th European Microwave Conferences, 2000, Paris, France. pp.102-104. ⟨hal-00158996⟩

• Article dans une revue

Fermi-edge singularities in AlxGa1-xAs quantum wells : extrinsic versus many-body scattering processes

Thierry Melin, F. Laruelle

Physical Review Letters, 2000, 85, pp.852-855. ⟨hal-00158647⟩