Publications

• Article dans une revue

Lithium insertion in SnS2

I. Lefebvre, J. Olivier-Fourcade, J.C. Jumas, P. Lavela

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.3110-3116. ⟨hal-00158662⟩

• Article dans une revue

Strain mapping of V-groove InGaAs/GaAs strained quantum wires using cross sectional Atomic Force Microscopy

F. Lelarge, C. Priester, C. Constantin, A. Rudra, K. Leifer, E. Kapon

Applied Surface Science, 2000, 166, pp.290-294. ⟨hal-00158661⟩

• Communication dans un congrès

Nonlinear mode of parametric ultrasonic phase conjugation. Numerical approach

S. Ben Khelil, A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

2000, pp.569-572. ⟨hal-00158461⟩

• Communication dans un congrès

Propriétés et applications des nanocristaux de silicium et de germanium

Christophe Delerue, Yann-Michel Niquet, Guy Allan, Michel Lannoo

7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158967⟩

• Communication dans un congrès

Polymères conjugués à architectures contrôlées et diversifiées

K. Lmimouni, C. Dufour, M. Bouachvine, J. Lerc-Porte, F. Serin-Spirau, C. Torreilles

Journées de Chimie Organique, JCO 2000, 2000, Rennes, France. ⟨hal-00158470⟩

• Communication dans un congrès

Conjugaison de phase et retournement temporel : concepts physiques et applications

Philippe Pernod

48èmes Journées Nationales de l'Union des Physiciens, 2000, Lille, France. ⟨hal-00158469⟩

• Article dans une revue

Measurement of residual phase noise of frequency divider using a single divider technique

V. Brugidou, Paul-Alain Rolland

A new technique for measuring the residual phase noise of a frequency divider is proposed. The new technique enables one divider to be characterised whereas the traditional technique necessitates two dividers. Experimentation demonstrates the validity of the technique, which is quicker and more…

Electronics Letters, 2000, 36 (16), pp.1391-1393. ⟨10.1049/el:20000983⟩. ⟨hal-00158126⟩

• Article dans une revue

Nature of impurity states in doped amorphous silicon

Guy Allan, Christophe Delerue, Michel Lannoo

We calculate the electronic structure of doped amorphous silicon in a tight-binding framework. Substitutional impurities are randomly introduced at fourfold-coordinated sites of a previously published model of a-Si:H. Our most important result is that single impurities have much larger binding…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.10206-10210. ⟨10.1103/PhysRevB.61.10206⟩. ⟨hal-00158663⟩

• Article dans une revue

Quantum confinement in germanium nanocrystals

Yann-Michel Niquet, Guy Allan, Christophe Delerue, Michel Lannoo

The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters.…

Applied Physics Letters, 2000, 77, pp.1182-1184. ⟨10.1063/1.1289659⟩. ⟨hal-00158666⟩

• Autre publication scientifique

Nouvelles architectures de sources stables programmables en gamme millimétrique et centimétrique

G. Lewandowski

2000. ⟨hal-00158127⟩