Publications

• Article dans une revue

Mobility Collapse in Undoped and Si‐Doped GaN Grown by LP‐MOVPE

Zahia Bougrioua, J.-L Farvacque, Ingrid Moerman, Piet Demeester, J.J. Harris, K Lee, Gustaaf van Tendeloo, Oleg Lebedev, E. J. Thrush

physica status solidi (b), 1999. ⟨hal-02906475⟩

• Article dans une revue

Interpretation of the Temperature‐Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

J.J. Harris, K Lee, I. Harrison, L. B. Flannery, D. Korakakis, T. S. Cheng, C. T. Foxon, Z. Bougrioua, I. Moerman, W. van Der Stricht, E. J. Thrush, B. Hamilton, K. Ferhah

Electron transport in Si‐doped and unintentionally‐doped GaN films grown on sapphire by MOCVD and MBE has been analysed assuming that a parallel conducting channel, via an impurity band, is present. No dependence on growth method or dopant type was observed, but other trends were apparent: a) the…

Physica Status Solidi A (applications and materials science), 1999. ⟨hal-02906478⟩

• Communication dans un congrès

Modeling local anodic oxidation induced by near field microscopy

Emmanuel Dubois, Jean-Luc Bubendorff

Proc. of the 10th workshop on dielectrics in microelectronics, Nov 1999, Barcelona, Spain. ⟨hal-04249205⟩

• Article dans une revue

Theoretical characterization of the electronic properties of extended thienylenevinylene oligomers

Christophe Krzeminski, Christophe Delerue, Guy Allan, Vincent Haguet, Didier Stiévenard, P. Frere, Eric Levillain, Jean Roncali

We present semiempirical tight binding calculations on thienylenevinylene oligomers up to the hexadecamer stage (n=16) and ab initio calculations based on the local density approximation up to n=8. The results correctly describe the experimental variations of the gap versus size, the optical…

The Journal of Chemical Physics, 1999, 111 (14), pp.6643-6649. ⟨10.1063/1.480012⟩. ⟨hal-00633591⟩

• Article dans une revue

Resonant tunneling between two continua

L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, J. Zemmouri

Physical Review B, 1999, 60 (15), pp.10628-10631. ⟨10.1103/PhysRevB.60.10628⟩. ⟨hal-03301332⟩

• Communication dans un congrès

Speech enhancement for vehicle hands-free mobile telephony

B. Bendjima, Atika Rivenq, Iyad Dayoub, Jean-Michel Rouvaen

Gateway to 21st Century Communications Village. VTC 1999-Fall. IEEE VTS 50th Vehicular Technology Conference (Cat. No.99CH36324), Sep 1999, Amsterdam, Netherlands. pp.2168-2172 vol.4, ⟨10.1109/VETECF.1999.797322⟩. ⟨hal-03383105⟩

• Communication dans un congrès

Micromachining techniques at terahertz frequencies

S. Arscott, Lionel Duvillaret, Patrick Mounaix, Frédéric Garet, Jean-Louis Coutaz, D. Lippens

In this paper we have characterized the refractive indexed and absorption coefficient of negative photoresist NANO XP SU-8 from 0.1-1.6 THz using THz time-domain spectroscopy. Over the measured frequency range it was found that the refractive index is a relatively flat function of frequency,…

Industrial Lasers and Inspection (EUROPTO Series), Jun 1999, Munich, Germany. pp.335, ⟨10.1117/12.361055⟩. ⟨hal-02348077⟩

• Communication dans un congrès

Fréquence de résonance de cavités de Fabry-Perot en ondes millimétriques - Application aux antennes à faisceaux gaussiens

Ronan Sauleau, Philippe Coquet, Daniel Thouroude, J.P. Daniel, T. Matsui

Optique Hertzienne et Diélectriques'99, Sep 1999, Besançon, France. 4 p. ⟨hal-00557790⟩

• Article dans une revue

Influence of natural and initial acoustoelastic coefficients on residual stress evaluation: Theory and experiment

Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Wei-Jiang Xu

Journal of Applied Physics, 1999, 86 (5), pp.2490-2498. ⟨10.1063/1.371082⟩. ⟨hal-03811443⟩

• Article dans une revue

Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate

B. Boudart, Christophe Gaquière, M. Constant, A. Lorriaux, N. Lefebvre

Effects of SiNx deposition on undoped Ga0.47In0.53As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga0.47In0.53As material, whatever the thickness and the temperature…

Journal of Raman Spectroscopy, 1999, 30 (8), pp.715 - 719. ⟨10.1002/(SICI)1097-4555(199908)30:83.0.CO;2-T⟩. ⟨hal-01647799⟩