Publications

• Communication dans un congrès

Numerical modelling of shape memory alloy nonlinear behavior laws : application to an adaptative structure

L. Buchaillot, S. Rafanomezantsoa, Anne-Christine Hladky, I. Roch

Proceedings of the 2000 International Conference on Shape Memory and Superelastic Technologies, SMST-2000, 2000, Pacific Grove, CA, United States. ⟨hal-00158519⟩

• Article dans une revue

An analog beam-forming circuit for ultrasound imaging using switched-current delay lines

Bruno Stefanelli, I. O'Connor, L. Quiquerez, Andreas Kaiser, D. Billet

IEEE Journal of Solid-State Circuits, 2000, 35, pp.202-211. ⟨hal-00158512⟩

• Communication dans un congrès

New regulated voltage down converter based on modified bandgap cell

Edith Kussener, Herve Barthelemy, A. Robers, A. Malherbe, A. Kaiser

2000, pp.19-21. ⟨hal-00158509⟩

• Autre publication scientifique

Contribution à la réalisation technologique de transistors à effet de champ dans les filières GaAs, InP et GaN pour l'amplification de puissance hyperfréquence

B. Boudart

2000. ⟨hal-00159048⟩

• Article dans une revue

Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

J. Collet, O. Tharaud, A. Chapoton, D. Vuillaume

Applied Physics Letters, 2000, 76, pp.1941-1943. ⟨hal-00158477⟩

• Communication dans un congrès

Nouveau microcapteur de rayonnement ultraviolet à absorption différentielle

Katir Ziouche, Mohamed Boutchich, D. Loridant-Bernard, Pascale Godts, Didier Leclercq

Journées Micro et Nano Technologies, 2000, Paris, France. ⟨hal-00158491⟩

• Article dans une revue

Method for tight-binding parametrization : application to silicon nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62, pp.5109-5116. ⟨10.1103/PhysRevB.62.5109⟩. ⟨hal-00158664⟩

• Communication dans un congrès

Les matériaux métamorphiques : une voie pour l'intégration de composants pour applications millimétriques sur substrat d'arséniure de gallium

Y. Cordier, A. Cappy, M. Zaknoune, S. Bollaert

Journée Thématique sur l'Electronique Intégrée, 2000, Arcueil, France. ⟨hal-00158447⟩

• Article dans une revue

Sub-harmonic excitation of a planar magneto-mechanical system by means of giant magnetostrictive thin films

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef

In the present paper, we report the first results concerning the studies on non-linear actuation of cantilevers using giant magneto-strictive thin films in the vicinity of the spin reorientation transition (SRT). Bimorph centimetre beams (24×5 mm2) were designed using 160 μm thick glass, and 0.4 μm…

Journal of Magnetism and Magnetic Materials, 2000, 210 (1-3), pp.302-308. ⟨10.1016/S0304-8853(99)00658-7⟩. ⟨hal-00158465⟩

• Article dans une revue

The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?

S. Silvestre, D. Bernard-Loridant, E. Constant, M. Constant, Jacques Chevallier

Applied Physics Letters, 2000, 20, pp.3206-3208. ⟨hal-00158582⟩