Publications

• Article dans une revue

Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

Michel Abou-Khalil, Toshiaki Matsui, Ke Wu, Roman Maciejko, Zahia Bougrioua

Applied Physics Letters, 1998, 73 (1), pp.70-72. ⟨10.1063/1.121726⟩. ⟨hal-02906469⟩

• Article dans une revue

Sonic stop-bands for cubic arrays of rigid inclusions in air

M.S. Kushwaha, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur

The European Physical Journal B: Condensed Matter and Complex Systems, 1998, 3 (2), pp.155-161. ⟨10.1007/s100510050296⟩. ⟨hal-03301314⟩

• Article dans une revue

Inhomogeneous strain relaxation in etched quantum dots and wires: From strain distributions to piezoelectric fields and band-edge profiles

Y. Niquet, C. Priester, C. Gourgon, H. Mariette

Physical Review B, 1998, 57 (23), pp.14850-14859. ⟨10.1103/PhysRevB.57.14850⟩. ⟨hal-04141510⟩

• Article dans une revue

The determination of the viscoelastic properties of liquid materials at ultrasonic frequencies by CW mode impedance measurements

Yves Deblock, Fabrice Lefebvre, Edouard Radziszewski, Bertrand Nongaillard

Abstract: A method is described for measuring shear mechanical properties of liquids at ultrasonic frequencies. The method is based on the process of the electrical impedance of a sensor in contact with the liquid. The sensor is composed of a piezoelectric transducer bonded to a delay line. The…

IEEE Transactions on Instrumentation and Measurement, 1998, 47 (3), pp.680-685. ⟨10.1109/19.744324⟩. ⟨hal-04115498⟩

• Article dans une revue

Organic monolayers on Si(111) by electrochemical method

P. Allongue, C.Henry de Villeneuve, J. Pinson, F. Ozanam, J.N. Chazalviel, X. Wallart

This work details the formation of organic monolayers on Si(111) by electrochemical methods. We show that grafting of phenyl groups is possible by reduction of +N2–Ar–X cations where the substituent X may be Br, NO2, COOH, CN, CnH2n+1 (n=1, 4, 12). Characterizations show that the electrochemical…

Electrochimica Acta, 1998, 43 (19-20), pp.2791-2798. ⟨10.1016/S0013-4686(98)00020-6⟩. ⟨hal-04166330⟩

• Communication dans un congrès

Structural dependence of optical bandgaps of silicon nanoclusters

Christophe Delerue, Michel Lannoo, Guy Allan

EMRS Symposium on "Light Emission from Silicon: Progress Towards Si-Based Optoelectronics", May 1998, Strasbourg, France. ⟨hal-03316945⟩

• Article dans une revue

A three-terminal edge-coupled InGaAs/InP heterojunction phototransistor for multifunction operation

Vincent Magnin, J. van de Casteele, J. Vilcot, J. Harari, J. Gouy, D. Decoster

Microwave and Optical Technology Letters, 1998, 17 (6), pp.408-412. ⟨10.1002/(SICI)1098-2760(19980420)17:63.0.CO;2-W⟩. ⟨hal-04441929⟩

• Article dans une revue

Acoustic spectral gaps and discrete transmisson in slender tubes

M.S. Kushwaha, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur

Solid State Communications, 1998, 106 (10), pp.659-663. ⟨10.1016/S0038-1098(98)00112-4⟩. ⟨hal-03301316⟩

• Article dans une revue

HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS

D Goguenheim, Alain Bravaix, Dominique Vuillaume, M Varrot, N Revil, P Mortini

AC stressing is investigated to determine the hot-carrier reliability in a 0.5 μm CMOS technology and is interpreted by a quasi-static model based on distinct damage mechanisms. The hot-carrier dependence of n-MOSFETs operating in pass-transistor configurations is carefully studied as a function of…

Microelectronics Reliability, 1998, 38 (4), pp.539-544. ⟨10.1016/S0026-2714(97)00217-5⟩. ⟨hal-03689839⟩

• Article dans une revue

HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS

D Goguenheim, Alain Bravaix, Dominique Vuillaume, M Varrot, N Revil, P Mortini

AC stressing is investigated to determine the hot-carrier reliability in a 0.5 μm CMOS technology and is interpreted by a quasi-static model based on distinct damage mechanisms. The hot-carrier dependence of n-MOSFETs operating in pass-transistor configurations is carefully studied as a function of…

Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (4), pp.539-544. ⟨10.1016/S0026-2714(97)00217-5⟩. ⟨hal-03674496⟩