Publications

• Article dans une revue

Influence of Al mole fraction on the noise performance of GaAs/Al/sub x/Ga/sub 1-x/As HEMT's

J. Mateos, D. Purdo, T. Gonzilez, P. Takyszak, Francois Danneville, A. Cappy

IEEE Transactions on Electron Devices, 1998, 45 (9), pp.2081-2083. ⟨10.1109/16.711380⟩. ⟨hal-03612828⟩

• Proceedings/Recueil des communications

High Speed Optoelectronic Devices for Optical to Millimeter Wave Conversion

Jean Pierre Vilcot, Vincent Magnin, J. Harari, M. Fendler, Didier Decoster

Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), Materials Science Forum, 297-298, pp.87-94, 1998, ⟨10.4028/www.scientific.net/MSF.297-298.87⟩. ⟨hal-04445064⟩

• Article dans une revue

Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon

P. Fontaine, Emmanuel Dubois, D. Stiévenard

A comparison between scanning tunneling microscope (STM) and atomic force microscope (AFM) nanolithography techniques based on local oxidation of silicon is proposed. This work deals with the three different near-field microscopy techniques, namely, STM, AFM in contact mode (CM-AFM), and tapping…

Journal of Applied Physics, 1998, 84 (4), pp.1776-1781. ⟨10.1063/1.368334⟩. ⟨hal-04246740⟩

• Article dans une revue

Surface electronic structure of a step-well-basis superlattice

Róża Kucharczyk, M. Stȩślicka, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski, E. El Boudouti

Physical Review B, 1998, 58 (8), pp.4589-4598. ⟨10.1103/PhysRevB.58.4589⟩. ⟨hal-04070303⟩

• Article dans une revue

Experimental evidence for the existence of absolute acoustic band gaps in two-dimensional periodic composite media

Jerome O. Vasseur, P Deymier, G Frantziskonis, G Hong, Bahram Djafari-Rouhani, L. Dobrzynski

Journal of Physics: Condensed Matter, 1998, 10 (27), pp.6051-6064. ⟨10.1088/0953-8984/10/27/006⟩. ⟨hal-03301321⟩

• Article dans une revue

Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

Michel Abou-Khalil, Toshiaki Matsui, Ke Wu, Roman Maciejko, Zahia Bougrioua

Applied Physics Letters, 1998, 73 (1), pp.70-72. ⟨10.1063/1.121726⟩. ⟨hal-02906469⟩

• Article dans une revue

Sonic stop-bands for cubic arrays of rigid inclusions in air

M.S. Kushwaha, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur

The European Physical Journal B: Condensed Matter and Complex Systems, 1998, 3 (2), pp.155-161. ⟨10.1007/s100510050296⟩. ⟨hal-03301314⟩

• Article dans une revue

Inhomogeneous strain relaxation in etched quantum dots and wires: From strain distributions to piezoelectric fields and band-edge profiles

Y. Niquet, C. Priester, C. Gourgon, H. Mariette

Physical Review B, 1998, 57 (23), pp.14850-14859. ⟨10.1103/PhysRevB.57.14850⟩. ⟨hal-04141510⟩

• Article dans une revue

Organic monolayers on Si(111) by electrochemical method

P. Allongue, C.Henry de Villeneuve, J. Pinson, F. Ozanam, J.N. Chazalviel, X. Wallart

This work details the formation of organic monolayers on Si(111) by electrochemical methods. We show that grafting of phenyl groups is possible by reduction of +N2–Ar–X cations where the substituent X may be Br, NO2, COOH, CN, CnH2n+1 (n=1, 4, 12). Characterizations show that the electrochemical…

Electrochimica Acta, 1998, 43 (19-20), pp.2791-2798. ⟨10.1016/S0013-4686(98)00020-6⟩. ⟨hal-04166330⟩

• Article dans une revue

The determination of the viscoelastic properties of liquid materials at ultrasonic frequencies by CW mode impedance measurements

Yves Deblock, Fabrice Lefebvre, Edouard Radziszewski, Bertrand Nongaillard

Abstract: A method is described for measuring shear mechanical properties of liquids at ultrasonic frequencies. The method is based on the process of the electrical impedance of a sensor in contact with the liquid. The sensor is composed of a piezoelectric transducer bonded to a delay line. The…

IEEE Transactions on Instrumentation and Measurement, 1998, 47 (3), pp.680-685. ⟨10.1109/19.744324⟩. ⟨hal-04115498⟩