Publications

• Article dans une revue

Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications

X. Hue, B. Boudart, Y. Crosnier

The etching characteristics of GaAs and Al0.22Ga0.78AsAl0.22Ga0.78As in citric acid/hydrogen peroxide/ammonium hydroxide etching solution were studied. The selectivity of GaAs to Al0.22Ga0.78AsAl0.22Ga0.78As was as high as 200 at 20 °C20 °C (510 at 0 °C0 °C) by optimizing the pHpH and citric acid/…

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1998, 16 (5), pp.2675-2679. ⟨10.1116/1.590255⟩. ⟨hal-01644716⟩

• Communication dans un congrès

A multimedia educative tool concerning microwave circuits, based on a physical approach of their time-domain operation

M.R. Friscourt, Christophe Dalle

2nd European Workshop on Microelectronics Education, 1998, Noordwijkerhout, Netherlands. ⟨hal-00005309⟩

• Article dans une revue

Noise and transit time in ungated FET structures

J. Mateos, T. Gonzalez, D. Pardo, P. Tadyszak, Francois Danneville, A. Cappy

IEEE Transactions on Electron Devices, 1997, 44 (12), pp.2128-2135. ⟨10.1109/16.644625⟩. ⟨hal-03612839⟩

• Communication dans un congrès

Edge-coupled InGaAs/InP phototransistors for microwave radio fibre links

J.-P. Vilcot, Vincent Magnin, J. van de Casteele, J. Harari, J.-P. Gouy, B. Bellini, D. Decoster

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO, Nov 1997, London, United Kingdom. pp.163-168, ⟨10.1109/EDMO.1997.668592⟩. ⟨hal-04461601⟩

• Communication dans un congrès

Sol-gel synthesis of PZT thin films

S. Arscott

IEE Colloquium on Electro-Technical Ceramics - Processing, Properties and Applications, Nov 1997, London, United Kingdom. pp.5-5, ⟨10.1049/ic:19971051⟩. ⟨hal-02348151⟩

• Chapitre d'ouvrage

Theory of the radiative and non radiative processes in silicon nanocrystallites

Christophe Delerue, Guy Allan, Michel Lannoo

This chapter describes the theory of radiative and nonradiative processes in Silicon (Si) nanocrystallites. Near threshold optical transitions in an indirect bandgap material like silicon have very small oscillator strength preventing its use in optoelectronics. An interesting field of research is…

WILLARDSON R.K., WEBER E., LOCKWOOD D. Light emissions in silicon : from physics to devices, Academic Press, London, UK, pp.253, 1997, ⟨10.1016/S0080-8784(08)62505-3⟩. ⟨hal-00132030⟩

• Article dans une revue

Electronic surface states and miniband structure of superlattices with multiple layers per period

E. El Boudouti, B. Djafari-Rouhani, Abdellatif Akjouj, Leonard Dobrzynski, Róża Kucharczyk, M. Stęślicka

Physical Review B, 1997, 56 (15), pp.9603-9612. ⟨10.1103/PhysRevB.56.9603⟩. ⟨hal-04069657⟩

• Communication dans un congrès

Impact of non-equilibrium transport and series resistances in 0.1um bulk and SOI MOSFETs

Bricout Paul-Henri, Emmanuel Augendre, Emmanuel Dubois

27th European Solid-State Device Research Conference, Sep 1997, Stuttgart (Germany), Germany. ⟨hal-04248535⟩

• Communication dans un congrès

Nanometer Scale Lithography of Silicon and Titanium using Scanning Probe Microscopy

Emmanuel Dubois, Paul-Aymeric Fontaine

27th European Solid-State Device Research Conference - ESSDERC, Sep 1997, Stuttgart, Germany. ⟨hal-04248550⟩

• Chapitre d'ouvrage

Mesures en radiofréquences

A. Pacaud, Gilles Dambrine

Techniques de l'Ingénieur, Collection Méthodes de Mesures, Editions TI Sciences et Techniques, Paris, France, dossier R1135, papier RE2, 1997. ⟨hal-00131705⟩