Publications

• Article dans une revue

Emergence and inflection angles in the configurational dependence of interface bilayer spin wave energies

H. Puszkarski, R. Józefowicz, B. Kolodziejczak, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

physica status solidi (b), 1996, 194 (2), pp.731-745. ⟨10.1002/pssb.2221940229⟩. ⟨hal-04070940⟩

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field

Z. Bougrioua, J. Farvacque, D. Ferre

This paper presents a theoretical analysis of the scattering potentials associated with dislocations in the case of two dimensional electron gas. It is shown that dislocations act mainly on the free carrier mobility through the potential associated with their linear electric charge and not with…

Journal of Applied Physics, 1996, 79 (3), pp.1536-1545. ⟨10.1063/1.360997⟩. ⟨hal-02415041⟩

• Proceedings/Recueil des communications

Resonant phonons in adsorbates

Leonard Dobrzynski, B. Djafari Rouhani, P. Zieliński, Abdellatif Akjouj, B. Sylla, E. Oumghar

After a brief review on surface phonons, we focus on resonant phonons in adsorbed thin 1ayers. Such resonances may in general be understood within the substrate bulk band as thin layer modes shiften and broaden by the i n t e r a c t i o n w i t h t h e s u b s t r a t e p h o n o n s. T h e s e r…

Acta Physica Polonica A, 89 (2), pp.139-144, 1996, ⟨10.12693/APhysPolA.89.139⟩. ⟨hal-04070920⟩

• Article dans une revue

Extraction method of the base series resistances in bipolar transistor in presence of current crowding

Emmanuel Dubois, P.H. Bricout, E. Robilliart

This paper proposes a new method to determine the base resistance components and the base sheet resistance under forward bias conditions and in the presence of current crowding. Using bipolar transistors with two independent base contacts, the base sheet resistance R<sub>&square; </sub…

IEEE Journal of Solid-State Circuits, 1996, 31 (1), pp.132-135. ⟨10.1109/4.485876⟩. ⟨hal-04246698⟩

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. II. The quantum regime

Z. Bougrioua, J. Farvacque, D. Ferre

This article deals with the influence of dislocations on the conductivity of two dimensional electron gas measured at helium temperature and at high magnetic field. Two kinds of dislocation substructures have been experimentally studied: they correspond either to a family of parallel dislocation…

Journal of Applied Physics, 1996, 79 (3), pp.1546-1555. ⟨10.1063/1.360998⟩. ⟨hal-02415036⟩

• Article dans une revue

Resonant Phonons in Adsorbates

Leonard Dobrzynski, B. Djafari Rouhani, P. Zieliński, Abdellatif Akjouj, B. Sylla, E. Oumghar

Acta Physica Polonica A, 1996, 89 (2), pp.139-144. ⟨10.12693/APhysPolA.89.139⟩. ⟨hal-04070831⟩

• Article dans une revue

Sharp resonant phonons in two adsorbed slabs

Abdellatif Akjouj, E.H El Boudouti, B Sylla, B Djafari-Rouhani, Leonard Dobrzynski

Solid State Communications, 1996, 97 (7), pp.611-616. ⟨10.1016/0038-1098(95)00735-0⟩. ⟨hal-04070867⟩

• Article dans une revue

Elastic Vibrations of Planar and Deterministic Rough Surfaces

B. Djafari Rouhani, A. Khelif, E.H. El Boudouti, Abdellatif Akjouj, Leonard Dobrzynski

Acta Physica Polonica A, 1996, 89 (2), pp.129-137. ⟨10.12693/APhysPolA.89.129⟩. ⟨hal-04070834⟩

• Communication dans un congrès

-low temperature GaAs/GaInP FET: device technology and characterization

Didier Theron, B. Boudart, Mohamed Zaknoune, Francis Mollot, Y. Druelle, Henri Gérard, Georges Salmer, M. Lipka, R. Westphalen, Erhard Kohn

Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States. ⟨hal-01654286⟩

• Article dans une revue

High performance InP-based heterostructure barrier varactors in single and stack configuration

Eric Lheurette, Patrick Mounaix, Patrice Salzenstein, Francis Mollot, Didier Lippens

Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As bolocking conductionlayers have been fabricated and characterized. The devices, whose electrical properties scale with layer complexity, exhibit, for a DHBV scheme, leakage currents as low as 10 A/cm² at 12V, a…

Electronics Letters, 1996, 32, pp.1417-1418. ⟨hal-00076889⟩