Publications

• Article dans une revue

High performance InP-based heterostructure barrier varactors in single and stack configuration

Eric Lheurette, Patrick Mounaix, Patrice Salzenstein, Francis Mollot, Didier Lippens

Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As bolocking conductionlayers have been fabricated and characterized. The devices, whose electrical properties scale with layer complexity, exhibit, for a DHBV scheme, leakage currents as low as 10 A/cm² at 12V, a…

Electronics Letters, 1996, 32, pp.1417-1418. ⟨hal-00076889⟩

• Article dans une revue

Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel

P.-H. Bricout, Emmanuel Dubois

Sub-0.1 micron planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is…

IEEE Transactions on Electron Devices, 1996, 43 (8), pp.1251-1255. ⟨10.1109/16.506776⟩. ⟨hal-04246714⟩

• Article dans une revue

Magnon band structure of periodic composites

Jerome O. Vasseur, L. Dobrzynski, Bahram Djafari-Rouhani, H. Puszkarski

We calculate the spin-wave spectra of two-dimensional composite materials consisting of periodic square arrays of parallel cylinders made of a ferromagnetic material embedded in a ferromagnetic background. Each material is described by its spontaneous magnetization MS and exchange constant A. An…

Physical Review B, 1996, 54 (2), pp.1043-1049. ⟨10.1103/PhysRevB.54.1043⟩. ⟨hal-03301165⟩

• Communication dans un congrès

Liaison Opto-Hyperfréquence

C. Sion, Ian Cayrefourcq, Vincent Magnin

Outre la largeur de bande instantanée, une des caractéristiques principales des antennes réseaux large bande est la couverture spatiale. Cette dernière est définie par notre habilité à orienter le faisceau émergeant de l’antenne et donc à notre aptitude à synthétiser des lois de retards. La…

Journée Nationale du Réseau doctoral en Microtechnologies, 1996, Lyon, France. ⟨hal-04458196⟩

• Communication dans un congrès

Hot-Carrier Noise under Degenerate Conditions

P. Tadyszak, A. Cappy, Francois Danneville, L. Reggiani, L. Varani, L. Rota

8th International Conference on Hot Carriers in Semiconductors, K. Hess, J. P. Leburton and U. Ravaioli, 1996, Chicago, United States. pp.413, ⟨10.1007/978-1-4613-0401-2⟩. ⟨hal-02436152⟩

• Article dans une revue

Modeling of microwave top illuminated PIN photodetector under very high optical power

Joseph Harari, G.H. Jin, F. Journet, J. van de Casteele, Jean-Pierre Vilcot, Christophe Dalle, M.R. Friscourt, Didier Decoster

IEEE Transactions on Microwave Theory and Techniques, 1996, 44, pp.1484-1487. ⟨hal-00005338⟩

• Article dans une revue

GaAs MESFET injection planar Gunn diode optronic applications

F. Driouch, D. Cailleu, M.R. Friscourt, Christophe Dalle

Electronics Letters, 1996, 32, pp.2274-2276. ⟨hal-00005301⟩

• Communication dans un congrès

-low temperature GaAs/GaInP FET: device technology and characterization

Didier Theron, B. Boudart, Mohamed Zaknoune, Francis Mollot, Y. Druelle, Henri Gérard, Georges Salmer, M. Lipka, R. Westphalen, Erhard Kohn

Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States. ⟨hal-01654286⟩

• Communication dans un congrès

Efficient non-quasi-static MOSFETs model for circuit simulation

Emmanuel Dubois, E. Robilliart

International Electron Devices Meeting, Dec 1995, Washington, United States. pp.945-948, ⟨10.1109/IEDM.1995.499372⟩. ⟨hal-04248390⟩

• Communication dans un congrès

Analysis of the charge injection in MOS analog switches using physical models

E. Robilliart, Emmanuel Dubois

Proc. of the International Semiconductor Device Research Symposium ISDRS’95, Dec 1995, Charlottesville, United States. ⟨hal-04249104⟩