Publications

• Communication dans un congrès

Modélisation physique des circuits non-linéaires microondes dans les domaines temporel et fréquentiel

Christophe Dalle, M.R. Friscourt, P.A. Rolland

2èmes Journées d'étude micro ondes et espace, 1992, Toulouse, France. ⟨hal-00005295⟩

• Communication dans un congrès

Time and frequency domain numerical physical modelling of two-terminal microwave non-linear circuits

Christophe Dalle, M.R. Friscourt, P.A. Rolland

Eight International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VIII), 1992, Vienne, Austria. ⟨hal-00005296⟩

• Article dans une revue

Adaptive mesh refinement for multilayer process simulation using the finite element method

Bruno Baccus, Dominique Collard, Emmanuel Dubois

An adaptive mesh refinement technique is proposed for a two-dimensional finite-element multilayer process simulator. Mesh refinement is based on the dopant concentration ratio inside each element, together with a prediction technique, minimizing the interpolation errors. A significant reduction in…

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1992, 11 (3), pp.396-403. ⟨10.1109/43.124426⟩. ⟨hal-04246676⟩

• Article dans une revue

Time-domain numerical modelling of microwave non-linear circuits

Christophe Dalle, P.A. Rolland, M.R. Friscourt

International Journal of Numerical Modelling: electronic networks, devices and fields; special issue on numerical modelling of semiconductor devices, 1992, 5, pp.41-52. ⟨hal-00005350⟩

• Communication dans un congrès

Monte Carlo/drift-diffusion coupling: non-equilibrium transport in deep submicron MOSFETs

Emmanuel Dubois, P.H. Bricout, R. Fauquembergue, D. Collard

International Electron Devices Meeting 1991 [Technical Digest], Dec 1991, Washington, United States. pp.519-522, ⟨10.1109/IEDM.1991.235342⟩. ⟨hal-04248322⟩

• Article dans une revue

DIFFUSION AND NOISE IN GAAS MATERIAL AND DEVICES

M. Demurcia, D. Gasquet, A. Elamri, J.-P. Nougier, J. Vanbremeersch

The variation of the diffusion coefficent D(E) versus the electric field strength E, is determined at 300 K in n-type GaAs (N(D) = 3 x 10(-17) cm-3), using pulsed high-frequency noise measurements. D(E) is found to increase slightly at low field, then to decrease down to one tenth of its ohmic…

IEEE Transactions on Electron Devices, 1991, 38 (11), pp.2531-2539. ⟨10.1109/16.97419⟩. ⟨hal-00322167⟩

• Communication dans un congrès

Microwave Interstitial Hyperthermia Controlled By Microwave Radiometry: Modelling Of The Temperature Increasing Versus Time

J.C. Camart, Fabrice Morganti, J.J. Fabre, M. Chive

Annual International Conference of the IEEE Engineering in Medicine and Biology Society Volume 13: 1991, Oct 1991, Orlando, United States. pp.991-992, ⟨10.1109/IEMBS.1991.684301⟩. ⟨hal-04154736⟩

• Communication dans un congrès

Surface recombination in bipolar transistor

Emmanuel Dubois

Proc. of the Bipolar Circuit and Technology Meeting BCTM’91, Sep 1991, Minneapolis, United States. ⟨hal-04249131⟩

• Communication dans un congrès

Determination of carriers capture cross-section of Si/SiO2 interface states by means of process/device simulations

Emmanuel Dubois

Proc. of the SISDEP’91, Sep 1991, Zurich, Switzerland. ⟨hal-04249119⟩

• Communication dans un congrès

Efficient simulation of impurity segregation during oxidation of arbitrarily shaped multilayer structures

Dominique Collard, B. Baccus, Emmanuel Dubois

Proc. of the SISDEP’91, Sep 1991, Zurich, Switzerland. ⟨hal-04249136⟩