Publications

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four…

Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03689782⟩

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four…

Microelectronics Reliability, 1999, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03674374⟩

• Article dans une revue

Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

M. V Wolkin, Jacob Jorne, P. M Fauchet, Guy Allan, Christophe Delerue

Depending on the size, the photoluminescence (PL) of silicon quantum dots present in porous silicon can be tuned from the near infrared to the ultraviolet when the surface is passivated with Si-H bonds. After exposure to oxygen, the PL shifts to the red by as much as 1 eV. This shift and the…

Physical Review Letters, 1999, 82 (1), pp.197-200. ⟨10.1103/PhysRevLett.82.197⟩. ⟨hal-03314703⟩

• Communication dans un congrès

High linearity of double channel GaAs PHEMT using a very high selective wet etching

X. Hue, B Boudart, Bertrand Bonte, Y. Crosnier

GAAS 99, 1999, Munich, Germany. ⟨hal-01649420⟩

• Article dans une revue

Noise analysis in devices under nonlinear operation

A. Cappy, Francois Danneville, Gilles Dambrine, Beaudouin Tamen

Solid-State Electronics, 1999, 43 (1), pp.21-26. ⟨10.1016/S0038-1101(98)00261-5⟩. ⟨hal-03612812⟩

• Communication dans un congrès

Pulsed measurements of GaN MESFET

B. Boudart, S. Trassaert, Christophe Gaquière, Didier Theron, Y. Crosnier, Fabrice Huet, M.A. Poisson

GAAS 99, 1999, Munich, Germany. ⟨hal-01649413⟩

• Chapitre d'ouvrage

Metal-semiconductor-metal photodetectors

Joseph Harari, Jean-Pierre Vilcot, Didier Decoster

Wiley Encyclopedia of Electrical and Electronics Engineering, Volume 12, Wiley, pp.561-577, 1999. ⟨hal-00132302⟩

• Communication dans un congrès

Nanometer scale Lithography on Silicon, Titanium and PMMA resist

Emmanuel Dubois, Jean-Luc Bubendorff

E-MRS Materials and Processes for Submicron Technologies, vol. 89, p. 1085-1089, Editors J.M. Martinez- Duart, R. Madar, R.A. Levy, 1999, 1999, Strasbourg, France. ⟨hal-04249216⟩

• Communication dans un congrès

Very high selective wet etching application to the uniformity improvement of linear power PHEMT

X. Hue, B. Boudart, Bertrand Bonte, Y. Crosnier

23th Workshop On Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), 1999, Chantilly, France. ⟨hal-01654299⟩

• Communication dans un congrès

Etude du contact ohmique Ti/Al/Ni/Au sur n-GaN pour applications hyperfréquences et haute température de TECs de puissance

B. Boudart, S. Trassaert, Xavier Wallart, J.C. Pesant, L Fugère, Didier Theron, Y. Crosnier

7es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1999, Egat, France. ⟨hal-01654466⟩