Nemanja Peric, Corentin Durand, Maxime Berthe, Yan Lu, Kekeli N'Konou, B. Grandidier, Roland Coratger, Isabelle Lefebvre, Philipp Ebert, Louis Biadala, Ludovic Desplanque, Xavier Wallart

The knowledge of the band alignment in semiconductor heterostructures is crucial, as it governs carrier confinement with many impacts on the performances of devices. By controlling the direction of the current flow in in-plane In 0.53 Ga 0.47 As/InP heterostructure nanowires, either horizontally…

Applied Physics Letters, 2022, 121 (19), pp.192104. ⟨10.1063/5.0104807⟩. ⟨hal-03846293⟩

Poster de conférence

Development of a « metastasis-on-a-chip » to monitor extravasation during metastatic process in breast cancer

Flavie Woesteland, Aude Sivery, Marie Denoulet, Mathilde Brulé, Anaïs Horochowska, Fabrice Soncin, Xuefen Le Bourhis, A. Treizebre, Chann Lagadec

1st ONCOLille Days, Nov 2022, Lille (France), France. ⟨hal-04545669⟩

Article dans une revue

On the Stationarity Time of a Vehicle-to-Infrastructure Massive Radio Channel in a Line-of-Sight Suburban Environment

Nor El Islam Dahmouni, Pierre Laly, Marwan Yusuf, Gauthier Delbarre, Martine Liénard, Eric Simon, Davy Gaillot

Massive multiple-input multiple-output (mMIMO) communication systems are a pillar technology for 5G. However, the wireless radio channel models relying on the assumption of wide-sense stationary uncorrelated scattering (WSSUS) may not always be valid for dynamic scenarios. Nonetheless, an analysis…

Sensors, 2022, 22 (21), pp.8420. ⟨10.3390/s22218420⟩. ⟨hal-03859502⟩

Article dans une revue

Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers

R. Strenaer, Y. Guhel, G. Brocero, C. Gaquiere, B. Boudart

Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high accuracy. This paper points out that all these thermal parameters can be…

Microelectronics Reliability, 2022, 138, pp.114693. ⟨10.1016/j.microrel.2022.114693⟩. ⟨hal-03842886⟩

Article dans une revue

Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances

Kathia Harrouche, Srisaran Venkatachalam, François Grandpierron, Etienne Okada, Farid Medjdoub

We report on a vertically scaled AlN/GaN HEMT technology design optimization for millimeter-wave applications. The undoped GaN channel thickness and carbon concentration into the buffer are extensively varied and systematically characterized. It is found that a thin GaN channel, typically below 150…

Applied Physics Express, 2022, 15 (11), pp.116504. ⟨10.35848/1882-0786/ac9c46⟩. ⟨hal-03828718⟩

Article dans une revue

Edge-Fog-Cloud Computing Hierarchy for Improving Performance and Security of NB-IoT-Based Health Monitoring Systems

Yousef-Awwad Daraghmi, Eman Yaser Daraghmi, Raed Daraghma, Hacene Fouchal, Marwane Ayaida

This paper proposes a three-computing-layer architecture consisting of Edge, Fog, and Cloud for remote health vital signs monitoring. The novelty of this architecture is in using the Narrow-Band IoT (NB-IoT) for communicating with a large number of devices and covering large areas with minimum…

Sensors, 2022, 22 (22), pp.8646. ⟨10.3390/s22228646⟩. ⟨hal-03891217⟩

Article dans une revue

Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

R. Strenaer, Y. Guhel, C. Gaquiere, B. Boudart

The aim of this article is to detect electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurement with photoionization techniques to rapidly assess their activation energies and time constants. In addition, this technique can also reveal the…

IEEE Transactions on Electron Devices, 2022, 69 (11), pp.6010-6015. ⟨10.1109/TED.2022.3209636⟩. ⟨hal-03812913⟩