Publications

Affichage de 2581 à 2590 sur 16100


  • Article dans une revue

3D tensegrity braces with superelastic response for seismic control

Filipe Santos, Catarina Caroço, Ada Amendola, M. Miniaci, Fernando Fraternali

Tensegrity structures have recently shown great potential as bracing devices for seismic control due to their unique ability to passively dissipate energy in structures subjected to severe deformations. Indeed, behaving as nonlinear springs, they are able to dissipate a great amount of energy…

International Journal for Multiscale Computational Engineering, 2022, 20 (5), pp.53-64. ⟨10.1615/IntJMultCompEng.2022041968⟩. ⟨hal-03873981⟩

  • Communication dans un congrès

Single cell classification using statistical learning on mechanical properties measured by mems tweezers

Bahram Ahmadian, Deborah Mbujamba, Jean Claude Gerbedoen, Momoko Kumemura, Hiroyuki Fujita, Dominique Collard, Sophie Dabo-Niang, Chann Lagadec, Mehmet Tarhan

Cell population is heterogenous and so presents a wide range of properties as metastatic potential. But using rare cells for clinical applications requires precise classification of individual cells. Here, we propose a multi-parameter analysis of single cells to classify them using statistical…

IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS 2022), Jan 2022, Tokyo, Japan. pp.317-320, ⟨10.1109/MEMS51670.2022.9699466⟩. ⟨hal-03528082⟩

  • Communication dans un congrès

Electric field driven insulator-to-metal transition in GaMo4S8 studied with the Nanoprobe

Houda Koussir, Yevheniia Chernukha, Maxime Berthe, Isabelle Lefebvre, B. Grandidier, Pascale Diener

23eme forum des microscopies à sondes locales, Mar 2022, Saint-Valery-sur-Somme, France. ⟨hal-03613274⟩

  • Communication dans un congrès

Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V

Kathia Harrouche, Sri Saran Vankatachalam, François Grandpierron, Etienne Okada, F Medjdoub

We report on AlN/GaN MISHEMT technology on SiC substrate for X-band applications. Transistors with 100 nm gate lengths deliver a high off-state breakdown voltage above 180V and 110 V in semi-on state. RF small signal measurements up to a drain bias (VDS) as high as 70V for two different gate…

European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas. ⟨hal-03677311⟩

  • Communication dans un congrès

Band structure tuning at (La,Sr)MnO3 / (Ba,Sr)TiO3 interface

Jérôme Wolfman, Antoine Ruyter, B. Negulescu, Pascal Andreazza, Xavier Wallart, Sylvie Schamm-Chardon, Robin Cours, Teresa Hungria, Cecile Autret

Band structure engineering in silicon-based heterostructures dedicated to microelectronic and energy harvesting applications has been common material scientist playground for decades. Careful design of the energy level variation at hetero-interfaces is used e.g. to collect electron while preventing…

EMRS Spring 2022, May 2022, Virtual, France. ⟨hal-03750429⟩

  • Communication dans un congrès

100 Gbit/s THz Data Transmission and Beyond using Multicore Fiber Combined with UTC Photodiode Array

Alfred Bewindin Sawadogo, Aritrio Bandyopadhyay, Malek Zegaoui, Mohammed Zaknoune, P. Szriftgiser, Karen Baudelle, Monika Bouet, Géraud Bouwmans, Davy Gaillot, Esben Ravn Andresen, Guillaume Ducournau, Laurent Bigot

Photonics-driven transmitters are leading the race towards high data-rates at THz frequencies. Here, spatial-multiplexing based on multicore fiber and photodiodes array is considered to alleviate the limited output power. Sub-systems have been developed and validated.

2022 Optical Fiber Communications Conference and Exhibition (OFC 2022), Mar 2022, San Diego, CA, United States. pp.Th2A.26, ⟨10.1364/OFC.2022.Th2A.26⟩. ⟨hal-03668762⟩

  • Communication dans un congrès

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Pierre Ruterana, Marie Pierre Chauvat, Magali Morales, Farid Medjdoub, Piero Gamarra, Christian Dua, Sylvain Delage

In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam followed by a rapid thermal annealing at 875°C for 30s under N2…

ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩. ⟨hal-03930667⟩

  • Communication dans un congrès

False Data Injection Attack Against Cyber-Physical Systems Protected by a Watermark

Khalil Guibene, Nadhir Messai, Marwane Ayaida, Lyes Khoukhi, Atika Rivenq, Yassin El Hillali

Several works are aiming to develop techniques allowing detecting False Data Injection Attacks, which represents one of the most harmful attacks due to its ability to damage a Cyber Physical Systems (CPS). Among these techniques the watermarking represents one of the most used ones. This paper…

IEEE Global Communications Conference (GLOBECOM), 2022, Rio de Janeiro, Brazil. pp.2794-2799, ⟨10.1109/GLOBECOM48099.2022.10001170⟩. ⟨hal-03944056⟩