Publications

• Communication dans un congrès

Non-linearity of RF switch based on 2D materials

S. Skrzypczak, K. Myungsoo, Guillaume Ducournau, Dominique Vignaud, R. Gassilloud, Alessandro Cresti, J. David-Vifflantzeff, Yves Deblock, J. Hadid, Vanessa Avramovic, Henri Happy, D. Akinwande, Emiliano Pallecchi

Graphene2021, Oct 2021, Grenoble, France. ⟨hal-03584529⟩

• Article dans une revue

A macroscopic object passively cooled into its quantum ground state of motion beyond single-mode cooling

D. Cattiaux, I. Golokolenov, S. Kumar, M. Sillanpää, L. Mercier de Lépinay, R. R Gazizulin, Xin Zhou, A. D Armour, Olivier Bourgeois, A. Fefferman, E. Collin

The nature of the quantum-to-classical crossover remains one of the most challenging open question of Science to date. In this respect, moving objects play a specific role. Pioneering experiments over the last few years have begun exploring quantum behaviour of micron-sized mechanical systems,…

Nature Communications, 2021, 12, pp.6182. ⟨10.1038/s41467-021-26457-8⟩. ⟨hal-03412629⟩

• Communication dans un congrès

Intrinsic carrier mobility of Graphene, CNT, and GNR

Jing Li, Yann-Michel Niquet, Christophe Delerue

Graphene2021, Oct 2021, Grenoble, France. ⟨hal-03587596⟩

• Communication dans un congrès

Advances on hBN growth on Ni substrate by Plasma Assisted Molecular Beam Epitaxy

Walter Batista Pessoa, Dominique Vignaud, X. Wallart

Hexagonal boron nitride (hBN) is an insulator from the 2D materials family receiving an extensive interest in the development of Van der Waals (VdW) heterostructures not only for graphene encapsulation due to its chemical stability but also as tunnel barrier when sandwiched by graphene layers. In…

Graphene2021, Oct 2021, Grenoble, France. ⟨hal-03683202⟩

• Communication dans un congrès

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq, E. Frayssinet, Marc Portail, M Bah, N. Defrance, T-H. Ngo, M. Abou Daher, M. Zielinski, Daniel Alquier, Jean-Claude de Jaeger, Yvon Cordier

13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France. ⟨hal-04038119⟩

• Article dans une revue

Impact of III-nitride/Si interface preconditioning on breakdown voltage in GaN-on-silicon HEMT

Abdelkrim Khediri, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, Ali Soltani

In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V…

Micromachines, 2021, 12 (11), pp.1284. ⟨10.3390/mi12111284⟩. ⟨hal-03403139⟩

• Communication dans un congrès

Millimeter-long travelling wave photoconductors for THz generation by photomixing

Fuanki Bavedila, Charbel Tannoury, Quyang Lin, Sylvie Lepilliet, Vanessa Avramovic, Etienne Okada, Dmitri Yarekha, Marc Faucher, David Troadec, Jean-Francois Lampin, Guillaume Ducournau, Goulc'Hen Loas, Vincent Magnin, Emilien Peytavit

In this communication we present the development of a travelling wave photoconductor for THz generation by photomixing. It is based on a silicon nitride optical waveguide coupled to a membrane-supported low-temperature-grown GaAs photoconductor embedded in a coplanar waveguide. The frequency…

46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2021), Aug 2021, Chengdu, China. ⟨10.1109/IRMMW-THz50926.2021.9567211⟩. ⟨hal-03584648⟩

• Communication dans un congrès

[Invited] Micro-dispositifs de stockage haute puissance tout solide: rêve ou réalité ?

Christophe Lethien, P.L. Taberna, Pascal Roussel, F. Favier, J. Le Bideau, Pardis Simon, Bruce Dunn, Thierry Brousse

Bi-Annuelle du RS2E, Oct 2021, Amiens, France. ⟨hal-03618936⟩

• Communication dans un congrès

Super resolution of A 400 MHz rotational line doublet with a TDS using a 850 ps long delay line

Sophie Eliet, Arnaud Cuisset, Francis Hindle, Jean-Francois Lampin, Romain Peretti

We improved the spectral resolution of THz time domain spectroscopy beyond the limit given by the delay line length. The constraint reconstruction algorithm used successfully depicted the 1.21 THz NH 3 doublet separated by ~400MHz in experimental data despite the 1.2 GHz delay line limitation.

46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2021, Chengdu, China. pp.989, ⟨10.1109/IRMMW-THz50926.2021.9566817⟩. ⟨hal-03465116⟩

• Communication dans un congrès

Experimental Investigation on the Bias and Temperature Dependence of the Forward Transmission Coefficient for HEMT Technologies

Mohammad Abdul Alim, Christophe Gaquière, Giovanni Crupi

The goal of this research is to look at the effects of temperature on the forward transmission coefficient (S 21 ) of high electron-mobility transistors (HEMTs), employing various technologies. The analysis is carried out on six different devices under different bias conditions with the ambient…

2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS), Oct 2021, Nis, Serbia. pp.70-73, ⟨10.1109/TELSIKS52058.2021.9606356⟩. ⟨hal-03547028⟩