Publications

• Communication dans un congrès

Heterogeneous Integration of Uni-Travelling-Carrier Photodiodes using Micro-Transfer-Printing on a Silicon-Nitride Platform

Dennis Maes, Gunther Roelkens, Mohammed Zaknoune, Sam Lemey, Emilien Peytavit, Bart Kuyken

2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2021, Munich, Germany. ⟨10.1109/CLEO/Europe-EQEC52157.2021.9542787⟩. ⟨hal-03370202⟩

• Communication dans un congrès

[Invited] Preindustrial GaN devices developed at the nanofabrication center of IEMN

Kathia Harrouche, W Rili, Elodie Carneiro, Jash Mehta, Idriss Abid, F Medjdoub

Transducers 2021, Jun 2021, online, France. ⟨hal-03256885⟩

• Communication dans un congrès

Integrated digital RF transmitters with single-bit delta-sigma-driven FIR-DACs

Andreas Kaiser, Antoine Frappé

Radio Frequency Integrated Circuits Symposium (RFIC) 2021, WSL Sub-6GHz advanced transmitter architectures and PA linearization techniques, Jun 2021, Atlanta, United States. ⟨hal-03701025⟩

• Article dans une revue

Linear electromagnetic energy harvester system embedded on a vehicle suspension: From modeling to performance analysis

Barbara Lafarge, Sébastien Grondel, Christophe Delebarre, Octavian Curea, Claude Richard

Although linear electromagnetic energy harvester (LEH) is a promising technique for converting energy in a vehicle suspension, due to the large displacements, one of the main drawbacks of the solutions inside the vehicle is still their size and complexity. To address this issue, this paper focuses…

Energy, 2021, 225, pp.119991. ⟨10.1016/j.energy.2021.119991⟩. ⟨hal-03169032⟩

• Thèse

Contribution au développement d'une méthode à ondes acoustiques de surface hautes fréquences dédiée à la caractérisation ultrasonore des structures à couches minces et au silicium mésoporeux, Contribution to the development of a high frequency surface acoustic wave method dedicated to the ultrasonic characterization of thin film structures and mesoporous silicon

Tahar Kadi

Ce travail rentre dans le cadre de la caractérisation des couches minces, de revêtements et de surfaces fonctionnelles (épaisseur, constantes élastiques, porosité…). Parmi les méthodes de caractérisation potentielles, les méthodes ultrasonores employant des ondes de surface (SAW) sont…, This work is within the scope of characterization of thin layers, coatings and functional surfaces (thickness, elastic constants, porosity,…). Among the characterization methods, the ultrasonic methods using surface acoustic waves are particularly interesting. Indeed, the propagation of these waves…

Acoustique [physics.class-ph]. Université Polytechnique Hauts-de-France; Institut national des sciences appliquées Hauts-de-France, 2021. Français. ⟨NNT : 2021UPHF0023⟩. ⟨tel-03385665⟩

• Communication dans un congrès

AlGaN/GaN HEMTs on AlN substrate for power electronics

Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, F Medjdoub

GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power…

44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩

• Communication dans un congrès

Above 70% PAE in Q-band with AlN/GaN HEMTs structures

Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub

In this paper, we report on a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performances and robustness for the thinner barrier layer, which is attributed to the reduced mechanical strain into the heterostructure. The impact…

WOCSDICE2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03279173⟩

• Communication dans un congrès

Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

Micka Bah, Damien Valente, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Jean-Claude de Jaeger, Eric Frayssinet, Remi Comyn, Thi Huong Ngo, Daniel Alquier, Yvon Cordier

This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using…

Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132. ⟨hal-03284079⟩

• Communication dans un congrès

GaN schottky diode on silicon substrate for high power THz multiplier

Giuseppe Di Gioia, M Samnouni, H Bouillaud, P Mondal, J Treuttel, Yvon Cordier, Malek Zegaoui, Guillaume Ducournau, Yannick Roelens, Mohammed Zaknoune

GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated on silicon substrate and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power…

WOCSDICE 2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03384345⟩

• Communication dans un congrès

Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes

Quentin Fornasiero, N. Defrance, Marie Lesecq, Eric Frayssinet, Yvon Cordier, Florian Chevalier, Nadir Idir, Jean-Claude de Jaeger

The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ion implantation in…

Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52. ⟨hal-03275589⟩