Publications

• Thèse

Optimisation de la technologie GaN pour l’amplification de puissance en bande Ku spécifique aux applications senseurs aéroportés, Optimization of GaN technology for Ku-band power amplification specific to airborne sensor applications

Romain Pecheux

Du fait des propriétés exceptionnelles du Nitrure de Gallium (GaN), les transistors HEMTs à base de GaN sont des candidats prometteurs pour les applications de puissance fonctionnant en gamme d’onde millimétrique. Cette technologie émergente est particulièrement attractive pour les senseurs…, Owing to the outstanding properties of Gallium Nitride (GaN), GaN-based HEMTs are promising candidates for power applications operating in the millimetre-wave range. This emerging technology is particularly attractive for the airborne sensors developed by Thales and could eventually replace the…

Micro et nanotechnologies/Microélectronique. Université de Lille, 2020. Français. ⟨NNT : 2020LILUI034⟩. ⟨tel-03623262⟩

• Communication dans un congrès

[Invited] Challenges and prospects of 3D micro-supercapacitors for powering the internet of things

Christophe Lethien

15th International Ceramics Congress, CIMTEC 2020, Symposium CJ - Materials Demands Towards Next Generation Electrochemical Energy Storage Systems, Sep 2020, Montecatini Terme, Italy. ⟨hal-03547317⟩

• Thèse

Co-intégration de HEMT GaN hyperfréquence normally-off avec des normally-on, Cointegration of normally-off and normally-on high frequency GaN HEMTs

Sébastien Aroulanda

Dans le cadre de la fabrication de dispositifs hyperfréquences, la fonctionnalité normally-off présente deux avantages : elle permet d’une part de s’affranchir de la source de tension négative pour les circuits intégrés monolithiques hyperfréquences (Monolithic Microwave Integrated Circuit – MMIC)…, In the context of high frequency devices fabrication, normally-off transistors offer two benefits: they eliminate the need of a negative voltage supply in the case of Monolithic Microwave Integrated Circuit (MMIC) and would allow the fabrication of logic circuits if integrated with normally-on HEMT…

Micro et nanotechnologies/Microélectronique. Université de Lille, 2020. Français. ⟨NNT : 2020LILUI083⟩. ⟨tel-03356712⟩

• Article dans une revue

Design and preparation of core-shell structured magnetic graphene oxide@MIL-101(Fe): Photocatalysis under shell to remove diazinon and atrazine pesticides

Hanieh Fakhri, Mahdi Farzadkia, Rabah Boukherroub, Varsha Srivastava, Mika Sillanpää

Solar Energy, 2020, 208, pp.990-1000. ⟨10.1016/j.solener.2020.08.050⟩. ⟨hal-03089831⟩

• Article dans une revue

NiMnCr layered double hydroxide-carbon spheres modified Ni foam: An efficient positive electrode for hybrid supercapacitors

Min Li, Ahmed Addad, Mathias Dolci, Pascal Roussel, Mu. Naushad, Sabine Szunerits, Rabah Boukherroub

Chemical Engineering Journal, 2020, 396, pp.125370. ⟨10.1016/j.cej.2020.125370⟩. ⟨hal-03089832⟩

• Communication dans un congrès

Multivariate $alpha$-Stable Models in OFDM-Based IoT Networks with Interference From a Poisson Spatial Field of Interferers

Malcolm Egan, Laurent Clavier

The uncoordinated nature of IoT networks makes interference management a challenging problem. Motivated by NB-IoT and SCMA protocols, we study the interference statistics of a Poisson spatial field of IoT interferers exploiting OFDM. We show for a sufficiently large number of subcarriers that the…

DCCN 2020 - 23rd International Conference on Distributed Computer and Communication Networks: Control, Computation, Communications, Sep 2020, Virtual Event, Russia. pp.1-9. ⟨hal-03018298⟩

• Article dans une revue

Geometrical nonlinearity of circular plates and membranes: An alternative method

D. Cattiaux, S. Kumar, Xin Zhou, A. Fefferman, E. Collin

We apply the well-established theoretical method developed for geometrical nonlinearities of micro/nano-mechanical clamped beams to circular drums. The calculation is performed under the same hypotheses, the extra difficulty being to analytically describe the (coordinate-dependent) additional…

Journal of Applied Physics, 2020, 128 (10), pp.104501. ⟨10.1063/5.0012329⟩. ⟨hal-02949626⟩

• Communication dans un congrès

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Idriss Abid, Riad Kabouche, F Medjdoub, Sven Besendörfer, Elke Meissner, Joff Derluyn, Stefan Degroote, Marianne Germain, Hideto Miyake

Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher operating voltages. In this work we present the fabrication and DC / high voltage characterizations of AlN/AlGaN…

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), Sep 2020, Vienne, Austria. pp.310-312, ⟨10.1109/ISPSD46842.2020.9170170⟩. ⟨hal-03044195⟩

• Article dans une revue

Hybrid nanostructured plasmonic electrodes for flexible organic light-emitting diodes

Shiwei Wu, Yilian Li, Hong Lian, Gaëtan Lévêque, B. Grandidier, Pierre-Michel Adam, Davy Gérard, Renaud Bachelot, Tao Xu, Bin Wei

Improved performance in flexible organic light-emitting diodes (OLEDs) is demonstrated by using a hybrid nanostructured plasmonic electrode consisting of silver nanowires (AgNWs) decorated with silver nanoparticles (AgNPs) and covered by exfoliated graphene sheets. Such all-solution processed…

Nanotechnology, 2020, 31 (37), pp.375203. ⟨10.1088/1361-6528/ab94df⟩. ⟨hal-03418469⟩

• Article dans une revue

Preparation of boron-doped diamond nanospikes on porous Ti substrate for high-performance supercapacitors

Jing Zhang, Yannick Coffinier, Zhi-Yan Zhao, Sabine Szunerits, Alexandre Barras, Xiang Yu, Rabah Boukherroub

Electrochimica Acta, 2020, 354, pp.136649. ⟨10.1016/j.electacta.2020.136649⟩. ⟨hal-03089836⟩