Publications

Affichage de 431 à 440 sur 16055


  • COMM

Inverted BER Trends for Energy-Detected GRSM-MQAM Massive MIMO Downlink

Oshin Daoud, Haïfa Farès, Yahia Medjahdi, Laurent Clavier, Amor Nafkha

This work investigates Generalized Receiver Spatial Modulation (GRSM) in a massive MIMO downlink scenario over millimetre wave channels. While GRSM enhances spectral efficiency (SE) and reduces power consumption, indexing additional bits using the spatial dimension increases the vulnerability to…

2025 21th International Conference on Wireless and Mobile Computing, Networking and Communications (WiMob), Oct 2025, Marrakesh, Morocco. pp.1-7, ⟨10.1109/wimob66857.2025.11257439⟩. ⟨hal-05395480⟩

  • ART

Co-Effect of pH Control Agent and pH Value on the Physical Properties of ZnO Thin Films Obtained by Chemical Bath Deposition for Potential Application in Dye-Sensitized Solar Cells

Alphonse Déssoudji Gboglo, Mazabalo Baneto, Komlan Segbéya Gadedjisso-Tossou, Ognanmi Ako, Ayayi Claude Ahyi, Muthiah Haris, Muthusamy Senthilkumar, Kekeli N’konou, Bruno Grandidier, Katawoura Beltako, Komi Apélété Amou, Milohum Mikesokpo Dzagli

This study presents the influence of pH control agents and pH value on the physical properties of ZnO thin films obtained by chemical bath deposition. ZnO thin films were synthesized on glass substrates using precursor solutions of different pHs prepared from two bases: sodium hydroxide (NaOH) and…

Surfaces, 2025, 8 (3), pp.46. ⟨10.3390/surfaces8030046⟩. ⟨hal-05313801⟩

  • OUV

A History of Physics: Phenomena, Ideas and Mechanisms. Essays in Honor of Salvo D'Agostino

Raffaele Pisano

Springer, 2025, 978-3-031-26173-2. ⟨10.1007/978-3-031-26174-9⟩. ⟨hal-04515850⟩

  • ART

ScAlN/GaN-on-Si (111) HEMTs for RF applications

Seif El Whibi, Nagesh Bhat, Yassine Fouzi, Nicolas Defrance, Jean-Claude de Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq

ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher 2-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN. A sub-10 nm barrier ScAlN/GaN heterostructure, grown by…

Applied Physics Express, 2025, 18 (4), pp.046501. ⟨10.35848/1882-0786/adc5db⟩. ⟨hal-05008937⟩