Publications

• ART

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to…

Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩

• ART

Fusion of transformed shallow features for facial expression recognition

Fares Bougourzi, Karim Mokrani, Yassine Ruichek, Fadi Dornaika, Abdelkrim Ouafi, Abdelmalik Taleb-Ahmed

Facial expression conveys important signs about the human affective state, cognitive activity, intention and personality. In fact, the automatic facial expression recognition systems are getting more interest year after year due to its wide range of applications in several interesting fields such…

IET Image Processing, 2019, 13 (9), pp.1479-1489. ⟨10.1049/iet-ipr.2018.6235⟩. ⟨hal-03138559⟩

• COMM

Enlarging the Frontiers of Research in the IR/mm Range Using Synchrotron Radiation

J-B. Brubach, B. Langerome, M. Verseils, F. Capitani, T. Souske, Jean-Francois Lampin, S. Eliet, O. Pirali, M. A. Martin-Drumel, Francis Hindle, Gaël Mouret, C. Evain, C Szwaj, E. Roussel, S. Bielawski, T. Timusk, Pascale Roy

Optical probes are among the most important techniques for characterizing new physical states induced by changes of temperature and/or pressure. In link with its high brightness and wide spectral coverage, infrared synchrotron radiation is ideally suited for such studies when the quantity of…

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873937⟩. ⟨hal-04295283⟩

• ART

Performance assessment of a small-size ocean wave energy harvester

Yongjie Sang, Bertrand Dubus

A lightweight electromechanical device is studied to harvest energy of ocean waves and supply electrical power to small-size ocean observation equipment such as sonobuoys. It is composed of a magnet fixed to the floating housing which follows the motion of the ocean surface and a moving coil…

MATEC Web of Conferences, 2019, 283, pp.05006. ⟨10.1051/matecconf/201928305006⟩. ⟨hal-02395559⟩

• ART

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

• ART

3D Patterning of Si by Contact Etching With Nanoporous Metals

Stéphane Bastide, Encarnacion Torralba, Mathieu Halbwax, Sylvain Le Gall, Elias Mpogui, Christine Cachet-Vivier, Vincent Magnin, Joseph Harari, Dmitri Yarekha, Jean-Pierre Vilcot

Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal assisted chemical etching while ensuring…

Frontiers in Chemistry, 2019, 7, pp.256. ⟨10.3389/fchem.2019.00256⟩. ⟨hal-02409484⟩

• ART

Giant, Anomalous Piezoimpedance in Silicon-on-insulator

H. Li, C.T.K. Lew, B.C. Johnson, J.C. Mccallum, S. Arscott, A.C.H. Rowe

A giant, anomalous piezoresponse of fully depleted silicon-on-insulator devices under mechanical stress is demonstrated by impedance spectroscopy. This piezoresponse strongly depends on the measurement frequency, ω, and consists of both a piezoresistance (PZR) and a piezocapacitance, whose maximum…

Physical Review Applied, 2019, 11 (4), pp.044010. ⟨10.1103/PhysRevApplied.11.044010⟩. ⟨hal-02345325⟩

• COMM

Robust and Simple Log-Likelihood Approximation for Receiver Design

Yasser Mestrah, Anne Savard, Alban Goupil, Guillaume Gelle, Laurent Clavier

Wireless Communications and Networking Conference (WCNC), 2019, Marrakesh, Morocco. pp.1-6, ⟨10.1109/WCNC.2019.8886114⟩. ⟨hal-02503135⟩

• ART

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, F Medjdoub, Johanna Rosen, Olof Kordina, Lars Hultman

ABSTRACT Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible chemical bonding. We report grain-boundary-free AlN…

Applied Physics Letters, 2019, 115 (22), pp.221601. ⟨10.1063/1.5123374⟩. ⟨hal-02400602⟩

• ART

Biomimetic surface modifications of stainless steel targeting dairy fouling mitigation and bacterial adhesion

Sawsen Zouaghi, Séverine Bellayer, V. Thomy, Thomas Dargent, Yannick Coffinier, Christophe André, Guillaume Delaplace, Maude Jimenez

Food and Bioproducts Processing, 2019, 113, pp.32-38. ⟨10.1016/j.fbp.2018.10.012⟩. ⟨hal-02322038⟩