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Communication dans un congrès

Texturation of lead-free BaTiO<sub>3</sub> based piezoelectric ceramics

Pascal Marchet, Angel Prato, Franck Levassort, Claire Bantignies, Maï Pham-Thi, Ana Borta-Boyon, Anne-Christine Hladky

Article dans une revue

Accuracy of Green's function estimation from correlation of diffuse elastic waves on thin plates

Lynda Chehami, Emmanuel Moulin, Julien de Rosny, Claire Prada

In a reverberant cavity, when a noise field is sufficiently diffuse, the correlation of the signal measured by two sensors provides an estimation of the Green's function (GF) between them. Here, the convergence of this passive estimation in the case of elastic waves on thin plates is studied.…

Journal of the Acoustical Society of America, 2019, 146 (5), pp.3505-3511. ⟨10.1121/1.5134066⟩. ⟨hal-02382833⟩

Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/2]

Raffaele Pisano

2019. ⟨hal-04510996⟩

N°spécial de revue/special issue

History of Machines and Mechanisms [Special Issue]

Marco Ceccarelli, Raffaele Pisano

Advances in Historical Studies, 8 (1), 2019. ⟨hal-04511002⟩

Article dans une revue

3D Patterning of Si by Contact Etching With Nanoporous Metals

Stéphane Bastide, Encarnacion Torralba, Mathieu Halbwax, Sylvain Le Gall, Elias Mpogui, Christine Cachet-Vivier, Vincent Magnin, Joseph Harari, Dmitri Yarekha, Jean-Pierre Vilcot

Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal assisted chemical etching while ensuring…

Frontiers in Chemistry, 2019, 7, pp.256. ⟨10.3389/fchem.2019.00256⟩. ⟨hal-02409484⟩

Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

Communication dans un congrès

Six-port technology for millimeter-wave metrology

Kamel Haddadi, Christophe Loyez, Katir Ziouche

The six-port measurement technique has played a major role in vector network analysis metrology, particularly within the community of national standards laboratories. Thanks to reduced hardware resource in contrast with conventional and well-established down-mixing heterodyne technique, this paper…

6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩