Saliha Ouendi, Cassandra Arico, Florent Blanchard, Jean-Louis Codron, Xavier Wallart, Pierre-Louis Taberna, Pascal Roussel, Laurent Clavier, Patrice Simon, Christophe Lethien

Atomic Layer Deposition has been used to grow 30 to 90 nm-thick amorphous Nb2O5 films onto Pt current collectors deposited on Si wafer. While T-Nb2O5 polymorph is obtained by further annealing at 750 °C, the…

Energy Storage Materials, 2019, 16, pp.581-588. ⟨10.1016/j.ensm.2018.08.022⟩. ⟨hal-02135683⟩

Article dans une revue

Pore network of cement hydrates in a high performance concrete by 3D FIB/SEM - Implications for macroscopic fluid transport

Yang Song, Catherine Davy, David Troadec, Xavier Bourbon

The pore structure of a mature industrial High Performance Concrete (HPC) is characterized at the scale of its cement hydrates with 3D Focused Ion Beam/Scanning Electron Microscopy (FIB/SEM). The considered scale is a mesoscale, with sample volumes of 61–118 μm3, and voxel sizes of 5.9 × 7.5 × 10 …

Cement and Concrete Research, 2019, 115, pp.308-326. ⟨10.1016/j.cemconres.2018.08.004⟩. ⟨hal-02974921⟩

Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/4]

Raffaele Pisano

2019. ⟨hal-04510994⟩

Article dans une revue

An optical power divider based on mode coupling using GaN/Al2O3 for underwater communication

Retno Wigajatri Purnamaningsih, Nji Raden Poespawati, Tomy Abuzairi, El Hadj Dogheche

This paper details the design of a 1 \texttimes 8 optical power divider, using a gallium nitride (GaN) semiconductor on sapphire, which can be applied to underwater optical wireless communication. The design consists of nine parallel rectangular waveguides which are based on mode coupling phenomena…

Photonics, 2019, 6 (2), pp.63. ⟨10.3390/photonics6020063⟩. ⟨hal-03140501⟩

Article dans une revue

Electromagnetic physical modeling of a gallium nitride distributed transferred electron device based planar waveguide structure THz oscillator

Christophe Dalle

The potential of a planar waveguide structure terahertz oscillator based on a gallium nitride distributed transferred electron device is theoretically investigated. The circuit numerical physical modeling relies on a two-dimensional time-domain electromagnetism/transport simulator. It is based on…

Advanced Electromagnetics, 2019, 8 (4), pp.89-102. ⟨10.7716/aem.v8i4.1214⟩. ⟨hal-02395343⟩

Communication dans un congrès

Multiple antenna receiver under impulsive SαS noise

Nicolas de Araujo Moreira, Laurent Clavier

In a usual MIMO framework when noise is assumed Gaussian, the channel matrix can be estimated with a Least Square approach. In addition, the Euclidean distance is optimal to detect the transmitted symbol. However, in dynamic interference, the Gaussian assumption is no longer valid. In this case,…

WCNC 2019, 17th IEEE Wireless Communications and Networking Conference, Apr 2019, Marrakech, Morocco. 6 p., ⟨10.1109/WCNC.2019.8885790⟩. ⟨hal-03270115⟩

Article dans une revue

Plasmon-Induced Electrocatalysis with Multi-Component Nanostructures

Palaniappan Subramanian, Dalila Meziane, Robert Wojcieszak, Franck Dumeignil, Rabah Boukherroub, Sabine Szunerits

Noble metal nanostructures are exceptional light absorbing systems, in which electron–hole pairs can be formed and used as “hot” charge carriers for catalytic applications. The main goal of the emerging field of plasmon-induced catalysis is to design a novel way of finely tuning the activity and…

Materials, 2019, Materials, 12 (1), pp.43. ⟨10.3390/ma12010043⟩. ⟨hal-02309136⟩

Article dans une revue

High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation

Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub

We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 μA/mm, a high breakdown voltage and a F T /F max…

IEEE Journal of the Electron Devices Society, 2019, 7, pp.1145-1150. ⟨10.1109/JEDS.2019.2952314⟩. ⟨hal-02357492⟩