Publications

Affichage de 4651 à 4660 sur 16055


  • COMM

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Farah Bouazzaoui, Marie Pierre Chauvat, Magali Morales, Malek Zegaoui, F Medjdoub, Piero Gamarra, Slawomir Kret, Pierre Ruterana

During the last years, the most significant improvement of the contact resistance forAlInN/GaN high electron mobility has been the use of a highly doped n+ GaN layer grown bymolecular beam epitaxy for the source and drain terminals. In a first report [1], the ohmiccontact processing was carried out…

International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland. ⟨hal-03287822⟩

  • OTHER

Pushing the limits of GaN-based power devices and power electronics

Gaudenzio Meneghesso, Joff Derluyn, Elke Meissner, F Medjdoub, Abhishek Banerjee, Naundorf J., Martin R Rittner

2018, pp.52-55. ⟨hal-03287707⟩

  • ART

Towards green synthesis of monodisperse Cu nanoparticles: An efficient and high sensitive electrochemical nitrite sensor

Devaraj Manoj, R. Saravanan, Jayadevan Santhanalakshmi, Shilpi Agarwal, Vinod Kumar Gupta, Rabah Boukherroub

Sensors and Actuators B: Chemical, 2018, 266, pp.873-882. ⟨10.1016/j.snb.2018.03.141⟩. ⟨hal-02375187⟩

  • ART

AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices

F. Bartoli, Thierry Aubert, Mohammed Moutaouekkil, Jérémy Streque, Philippe Pigeat, S. Zhgoon, Abdelkrim Talbi, Sami Hage-Ali, Hamid M 'Jahed, Omar Elmazria

— Surface acoustic waves (SAW) technology is very promising to achieve wireless sensors able to operate in high temperature environments up to possibly 1000°C. However, there is currently a bottleneck related to the packaging of such sensors. The current high-temperature packaging solutions can…

Sensors and Actuators A: Physical , 2018, 283, pp.9-16. ⟨10.1016/j.sna.2018.08.011⟩. ⟨hal-01868387⟩