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Affichage de 4661 à 4670 sur 16261

Article dans une revue

Giant, Anomalous Piezoimpedance in Silicon-on-insulator

H. Li, C.T.K. Lew, B.C. Johnson, J.C. Mccallum, S. Arscott, A.C.H. Rowe

A giant, anomalous piezoresponse of fully depleted silicon-on-insulator devices under mechanical stress is demonstrated by impedance spectroscopy. This piezoresponse strongly depends on the measurement frequency, ω, and consists of both a piezoresistance (PZR) and a piezocapacitance, whose maximum…

Physical Review Applied, 2019, 11 (4), pp.044010. ⟨10.1103/PhysRevApplied.11.044010⟩. ⟨hal-02345325⟩

Article dans une revue

Biomimetic surface modifications of stainless steel targeting dairy fouling mitigation and bacterial adhesion

Sawsen Zouaghi, Séverine Bellayer, V. Thomy, Thomas Dargent, Yannick Coffinier, Christophe André, Guillaume Delaplace, Maude Jimenez

Food and Bioproducts Processing, 2019, 113, pp.32-38. ⟨10.1016/j.fbp.2018.10.012⟩. ⟨hal-02322038⟩

Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/3]

Raffaele Pisano

2019. ⟨hal-04510995⟩

Article dans une revue

Optimization of surface treatment on MEMS probes for single-cell capture and release

Kensaku Hayashi, Momoko Kumemura, Shohei Kaneda, Vivek Menon, Laurent Jalabert, Saeko Tachikawa, Mehmet Tarhan, Teruo Fujii, Beomjoon Kim, Hiroyuki Fujita

Micro-electromechanical systems (MEMS) tweezers developed for the trapping and characterization of bio molecules such as DNA are also capable of cell handling, which will enable further application involving single cell characterization. However, cellular adhesion to Si tweezers surfaces can…

Sensors and Materials, 2019, 31 (9), pp.2873. ⟨10.18494/SAM.2019.2322⟩. ⟨hal-03153240⟩

Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

Communication dans un congrès

Six-port technology for millimeter-wave metrology

Kamel Haddadi, Christophe Loyez, Katir Ziouche

The six-port measurement technique has played a major role in vector network analysis metrology, particularly within the community of national standards laboratories. Thanks to reduced hardware resource in contrast with conventional and well-established down-mixing heterodyne technique, this paper…

6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩