Publications

• Article dans une revue

Plasmon-Induced Electrocatalysis with Multi-Component Nanostructures

Palaniappan Subramanian, Dalila Meziane, Robert Wojcieszak, Franck Dumeignil, Rabah Boukherroub, Sabine Szunerits

Noble metal nanostructures are exceptional light absorbing systems, in which electron–hole pairs can be formed and used as “hot” charge carriers for catalytic applications. The main goal of the emerging field of plasmon-induced catalysis is to design a novel way of finely tuning the activity and…

Materials, 2019, Materials, 12 (1), pp.43. ⟨10.3390/ma12010043⟩. ⟨hal-02309136⟩

• Article dans une revue

Electromagnetic physical modeling of a gallium nitride distributed transferred electron device based planar waveguide structure THz oscillator

Christophe Dalle

The potential of a planar waveguide structure terahertz oscillator based on a gallium nitride distributed transferred electron device is theoretically investigated. The circuit numerical physical modeling relies on a two-dimensional time-domain electromagnetism/transport simulator. It is based on…

Advanced Electromagnetics, 2019, 8 (4), pp.89-102. ⟨10.7716/aem.v8i4.1214⟩. ⟨hal-02395343⟩

• Article dans une revue

Synthesis of T-Nb2O5 thin-films deposited by atomic layer deposition for miniaturized electrochemical energy storage devices

Saliha Ouendi, Cassandra Arico, Florent Blanchard, Jean-Louis Codron, Xavier Wallart, Pierre-Louis Taberna, Pascal Roussel, Laurent Clavier, Patrice Simon, Christophe Lethien

Atomic Layer Deposition has been used to grow 30 to 90 nm-thick amorphous Nb₂O₅ films onto Pt current collectors deposited on Si wafer. While T-Nb₂O₅ polymorph is obtained by further annealing at 750 °C, the…

Energy Storage Materials, 2019, 16, pp.581-588. ⟨10.1016/j.ensm.2018.08.022⟩. ⟨hal-02135683⟩

• Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

• Article dans une revue

Y-shaped magnonic demultiplexer using induced transparency resonances

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We give an analytical demonstration of the possibility to realize a simple magnonic demultiplexer based on induced transparency resonances. The demultiplexer consists on an Y-shaped waveguide with an input line and two output lines. Each line contains two grafted stubs at a given position far from…

AIP Advances, 2019, 9 (3), pp.035011. ⟨10.1063/1.5080350⟩. ⟨hal-03143601⟩

• Article dans une revue

Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs

Wafa Bellil, Abdelkader Aissat, Jean-Pierre Vilcot

In this work we study and optimize the single solar cell efficiency of GaNxAs1-x-ySby and Ga1-xInxNyAs1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaNxAs1-x-ySby, and indium and nitrogen for Ga1-xInxNyAs1-y which gives us…

Procedia Computer Science, 2019, Procedia Computer Science, 151, pp.1028-1033. ⟨10.1016/j.procs.2019.04.145⟩. ⟨hal-02409552⟩

• Article dans une revue

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to…

Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩

• Communication dans un congrès

Energy-efficient techniques for combating the influence of reactive jamming using Non-Orthogonal Multiple Access and Distributed Antenna Systems

Joumana Farah, Jacques Akiki, Eric Pierre Simon

The aim of this work is to propose new approaches for maximizing the energy efficiency of downlink 5G mobile communication systems, in the presence of a reactive jammer. The concepts of non-orthogonal multiple access (NOMA) and distributed antenna systems (DAS) are exploited to devise joint subband…

Wireless Telecommunications Symposium (WTS 2019), Apr 2019, New York, NY, United States. ⟨10.48550/arXiv.1903.11574⟩. ⟨hal-04542881⟩

• N°spécial de revue/special issue

History of Machines and Mechanisms [Special Issue]

Marco Ceccarelli, Raffaele Pisano

Advances in Historical Studies, 8 (1), 2019. ⟨hal-04511002⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/2]

Raffaele Pisano

2019. ⟨hal-04510996⟩