Publications

• Article dans une revue

Modeling of a Circular Ring MEMS Resonator with Voltage Excitation by Means of an Orthogonal Polynomial Method

Ismail Naciri, Abdessamad Rguiti, Lahoucine Elmaimouni, Jean-Etienne Lefebvre, Faniry Emilson Ratolojanahary, Tadeusz Gryba

The three-dimensional vibrational behavior of a piezoelectric circular ring made of a 6 mm hexagonal material is studied using Legendre polynomial method. The method is simple to implement and based on expanding the electrical potential and the mechanical displacement components in a double series…

Acta Acustica united with Acustica, 2018, 104 (4), pp.553-560. ⟨10.3813/AAA.919196⟩. ⟨hal-03185120⟩

• Article dans une revue

A simplified modal expansion formalism adapted to the optical design of resonant cavity enhanced photodetectors using metallic gratings

Maximilien Billet, Emilien Peytavit

In this communication, we present a method to model the light absorption in a resonant photoconductor based on a photoconductive layer sandwiched between a metallic grating in front side and a metallic backside mirror. We started from a modal expansion formalism previously developed in order to…

Optik, 2018, 154, pp.828 - 839. ⟨10.1016/j.ijleo.2017.10.041⟩. ⟨hal-02997746⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 7/4]

Raffaele Pisano

2018. ⟨hal-04511003⟩

• Communication dans un congrès

On wafer millimetre wave power detection using a PN junction diode in BiCMOS 55 nm for in-situ large signal characterization

Joao Carlos Azevedo Goncalves, Issa Alaji, Daniel Gloria, Vincent Gidel, Frederic Gianesello, Sylvie Lepilliet, Guillaume Ducournau, Francois Danneville, Christophe Gaquière

This paper describes millimetre wave (mmW) on-wafer power detection using dedicated high frequency diode junction with a cut-off frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed in order to develop fully integrated power…

48th European Microwave Conference (EuMC), Sep 2018, Madrid, Spain. ⟨10.23919/EuMC.2018.8541387⟩. ⟨hal-03272705⟩

• Article dans une revue

An Added Value Alternative to RAIN RFID Items Characterization in Retail

Hadi Farhat, Plamen Iliev, Philippe Mariage, Nathalie Rolland

This paper deals with the difficulties of detecting UHF passive RFID tags in a RAIN RFID system implemented in a retail environment. The aim of this paper is to evolve from the notion of characterizing a tag to the approach of evaluating a tagged item in a system, in order to better understand the…

IEEE Access, 2018, 6, pp.32430-32439. ⟨10.1109/ACCESS.2018.2844739⟩. ⟨hal-03185115⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 7/2]

Raffaele Pisano

2018. ⟨hal-04511007⟩

• Communication dans un congrès

[Invited] Open problems in brain-emulating hardware

Francois Danneville, Ilias Sourikopoulos, Sara Hedayat, Christophe Loyez, Virginie Hoel, A. Cappy

8th International Conference on Unsolved Problems on Noise, UPoN 2018, Jul 2018, Gdansk, Poland. pp.45-46. ⟨hal-03340435⟩

• Article dans une revue

Optical transmission properties of an anisotropic defect cavity in one-dimensional photonic crystal

Noama Ouchani, Abdelaziz El Moussaouy, Hassan Aynaou, Youssef El Hassouani, El Houssaine El Boudouti, Bahram Djafari-Rouhani

We investigate theoretically the possibility to control the optical transmission in the visible and infrared regions by a defective one dimensional photonic crystal formed by a combination of a finite isotropic superlattice and an anisotropic defect layer. The Green's function approach has…

Physics Letters A, 2018, 382 (4), pp.231-240. ⟨10.1016/j.physleta.2017.11.020⟩. ⟨hal-03183514⟩

• Article dans une revue

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Ezgi Dogmus, Malek Zegaoui, F Medjdoub

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the…

Applied Physics Express, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩

• Communication dans un congrès

Conception and realization of highly selective band-pass filters in Ka-band built on thin polymer films

Mohammed El Gibari, Sara Bretin, Patrick Derval, S. Ginestar, Guillaume Lirzin, Hong Wu Li

A novel structure of high performance narrow band-pass filters on thin polymer film is reported in this paper. It's composed of two microstrip resonators placed between two via-free microstrip-grounded coplanar waveguide transitions. It combines therefore compactness, low-cost, fabrication…

29th International Conference on Microelectronics, ICM 2017, Dec 2017, Beirut, Lebanon. pp.1-4, ⟨10.1109/ICM.2017.8268896⟩. ⟨hal-01774145⟩