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Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC

M. Meneghini, M. Fregolent, N. Zagni, Y. Hamadoui, A. Marcuzzi, D. Favero, C. de Santi, M. Buffolo, M. Tomasi, G. Zappalà, E. Bahat-Treidel, E. Brusaterra, F. Brunner, O. Hilt, C. Huber, F Medjdoub, G. Meneghesso, G. Verzellesi, P. Pavan, E. Zanoni

We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and kV-range breakdown voltages; avalanche capability (a property of Si and SiC…

IEDM 2023 - 70th Annual IEEE International Electron Devices Meeting, Dec 2024, San Francisco, United States. pp.1-4, ⟨10.1109/IEDM50854.2024.10873536⟩. ⟨hal-04762052⟩