Publications

Affichage de 5151 à 5160 sur 16563


  • Article dans une revue

Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications

Flavien Cozette, Marie Lesecq, Adrien Cutivet, N. Defrance, Michel Rousseau, Hassan Maher, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2018, 39 (10), pp.1-1. ⟨10.1109/LED.2018.2864643⟩. ⟨hal-02273384⟩

  • Article dans une revue

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

T. Demonchaux, K. K. Sossoe, M. M. Dzagli, J. P. Nys, Maxime Berthe, David Troadec, A. Addad, M. Veillerot, G. Patriarche, H. J. Von Bardeleben, M. Schnedler, Christophe Coinon, Isabelle Lefebvre, M. A. Mohou, D. Stievenard, Jean-Francois Lampin, Ph. Ebert, X. Wallart, B. Grandidier

While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sectional scanning tunneling microscopy (STM), we…

Physical Review Materials, 2018, 2 (10), pp.104601. ⟨10.1103/PhysRevMaterials.2.104601⟩. ⟨hal-01912292⟩

  • Communication dans un congrès

[Invited] Reading Tartaglia’s and Beeckman Geometrical and Mathematical Modelling Applied to Natural Phenomena

Raffaele Pisano, Antonella Mastrorilli

International Colloquium Beekman in Context, 27-28 September, University of Middleburg, Sep 2018, Middleburg, Netherlands. ⟨hal-04519013⟩