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Affichage de 5281 à 5290 sur 16309

Article dans une revue

Electron and Hole g-Factors and Spin Dynamics of Negatively Charged Excitons in CdSe/CdS Colloidal Nanoplatelets with Thick Shells

Elena V. Shornikova, Louis Biadala, Dmitri R. Yakovlev, Donghai Feng, Victor F. Sapega, Nathan Flipo, Aleksandr A. Golovatenko, Marina A. Semina, Anna V. Rodina, Anatolie Mitioglu, Mariana V. Ballottin, Peter C. M. Christianen, Yuri G. Kusrayev, Michel Nasilowski, Benoit Dubertret, Manfred Bayer

We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump-probe Faraday…

Nano Letters, 2018, 18 (1), pp.373-380. ⟨10.1021/acs.nanolett.7b04203⟩. ⟨hal-03185123⟩

Communication dans un congrès

Miniaturized Coplanar Waveguide for Nanostructured Magnetostrictive Multilayer Characterization

Abdelhatif El Fellahi, Aurélien Mazzamurro, Jean Claude Gerbedoen, Yannick Dusch, Olivier Bou Matar, Philippe Pernod, Abdelkrim Talbi, Nicolas Tiercelin

A miniaturized coplanar waveguide (CPW) on a Y-cut LiNbO3 substrate operating in Radio Frequency region (RF) is proposed for studying of magnetostrictive multi-layered structure. The structure is composed of a 14 × [TbCo2 (3.7 nm)/FeCo (4 nm)] nanostructured multi-layer. Using microtechnology…

32nd Eurosensors Conference, EUROSENSORS 2018, Sep 2018, Graz, Austria. pp.851, ⟨10.3390/proceedings2130851⟩. ⟨hal-02318302⟩

Article dans une revue

Effect of graphene layer on the localized surface plasmon resonance (LSPR) and the sensitivity in periodic nanostructure

Mohamed El Barghouti, Abdellatif Akjouj, Abdellah Mir

We study the interaction of gold nanoparticles with a graphene film. Graphene is used as a spacer, as thin as possible, between the gold nanoparticles and the detection dielectric medium, and one of the advantages of graphene is to protect the structure, which allows to avoid the oxidation of…

Photonics and Nanostructures - Fundamentals and Applications, 2018, 31, pp.107-114. ⟨10.1016/j.photonics.2018.06.009⟩. ⟨hal-03183483⟩

Chapitre d'ouvrage

Chapter 1 - Interface response theory

L. Dobrzynski, Abdellatif Akjouj, El Houssaine El Boudouti, Housni Al-Wahsh, Bahram Djafari-Rouhani, Gaëtan Lévêque, Yan Pennec

A general theory of interface response in linear composite systems is presented in the first chapter of this book on phononics. Specific examples, fully developed in the next chapters of this book, are shortly presented in this chapter. Other examples using this general interface response theory…

Phononics: interface transmission tutorial book series, Elsevier, pp.1-18, 2018, ISBN 978-0-12-809948-3 ; e-ISBN 978-0-12-809931-5. ⟨10.1016/B978-0-12-809948-3.00001-6⟩. ⟨hal-03350426⟩

Article dans une revue

Improving performance of OFET by tuning occurrence of charge transport based on pentacene interaction with SAM functionalized contacts

Shuo Li, David Guérin, Kamal Lmimouni

Optimized pentacene thin film transistors have been achieved by two technological self-assembled monolayers (SAM) treatments, with surface modification of 3-octadecyltrichlorosilane (OTS) monolayer on SiO2 dielectric layer and 2,3,4,5,6-pentafluorobenzenethiol (PFBT) monolayer on gold source/drain…

Microelectronic Engineering, 2018, 195, pp.62-67. ⟨10.1016/j.mee.2018.04.002⟩. ⟨hal-03185119⟩

Communication dans un congrès

Single channel 100 Gbit/s link in the 300 GHz band

Vinay Kumar Chinni, Philipp Latzel, Malek Zegaoui, Christophe Coinon, X. Wallart, Emilien Peytavit, Jean-Francois Lampin, Klaus Engenhardt, P. Szriftgiser, Mohammed Zaknoune, Guillaume Ducournau

We report on the achievement of single channel 100 Gbit/s transmission, using linear resonant cavity enhanced unitravelling carrier photodiodes and QAM-16 modulation format. The indoor wireless link has been validated for up to 100 Gbit/s and 280 GHz carrier frequency.

43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2018, Nagoya, Japan. ⟨10.1109/IRMMW-THz.2018.8510070⟩. ⟨hal-03286178⟩

Article dans une revue

Highly confined Love waves modes by defect states in a holey SiO2/quartz phononic crystal

Yuxin Liu, Abdelkrim Talbi, Philippe Pernod, Olivier Bou Matar

Highly confined Love modes are demonstrated in a phononic crystal based on a square array of etched holes in SiO2 deposited on the ST-cut quartz. An optimal choice of the geometrical parameters contributes to a wide stop-band for shear waves' modes. The introduction of a defect by removing…

Journal of Applied Physics, 2018, 124, pp.145102. ⟨10.1063/1.5040069⟩. ⟨hal-01883664⟩

Article dans une revue

10-Gb/s Indoor THz Communications Using Industrial Si Photonics Technology

Elsa Lacombe, Cybelle Belem-Gonçalves, Cyril Luxey, Frédéric Gianesello, Cédric Durand, Daniel Gloria, Guillaume Ducournau

In this letter, we report the design, fabrication, and measurement of a silicon photonics-based transmitter (Tx) offering both mass production capability and high integration level potentiality. The Tx circuit consists of an integrated photodiode generating a 200-300-GHz signal for photonic…

IEEE Microwave and Wireless Components Letters, 2018, 28 (4), pp.362-364. ⟨10.1109/LMWC.2018.2811242⟩. ⟨hal-03183484⟩

Article dans une revue

Optical transmission properties of an anisotropic defect cavity in one-dimensional photonic crystal

Noama Ouchani, Abdelaziz El Moussaouy, Hassan Aynaou, Youssef El Hassouani, El Houssaine El Boudouti, Bahram Djafari-Rouhani

We investigate theoretically the possibility to control the optical transmission in the visible and infrared regions by a defective one dimensional photonic crystal formed by a combination of a finite isotropic superlattice and an anisotropic defect layer. The Green's function approach has…

Physics Letters A, 2018, 382 (4), pp.231-240. ⟨10.1016/j.physleta.2017.11.020⟩. ⟨hal-03183514⟩

Article dans une revue

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Ezgi Dogmus, Malek Zegaoui, F Medjdoub

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the…

Applied Physics Express, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩