Publications

• Ouvrages

The Dialogue between Sciences, Philosophy and Engineering. New Historical and Epistemological Insights. Homage to Gottfried W. Leibniz 1646-1716

Raffaele Pisano, Michel Fichant, Paolo Bussotti, Agamenon Oliveira

London College Publications, 2017, 978-1-84890-227-5. ⟨hal-04517656⟩

• Article dans une revue

Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor

M. Alimoradi Jazi, V. Janssen, W. Evers, A. Tadjine, C. Delerue, L. Siebbeles, H. van Der Zant, A. Houtepen, D. Vanmaekelbergh

Nano Letters, 2017, 17 (9), pp.5238-5243. ⟨10.1021/acs.nanolett.7b01348⟩. ⟨hal-02906808⟩

• Article dans une revue

Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy

A. Massoud, J.-M. Bluet, V. Lacatena, M. Haras, J.F. Robillard, Pierre-Olivier Chapuis

By thermally characterizing nanometer-thin suspended silicon membranes with various micrometric lengths in ambient conditions, we determine simultaneously the spatial resolution of our Wollaston-probe scanning thermal microscopy experiment, which probes an area of (285 nm)²,…

Applied Physics Letters, 2017, 111 (6), pp.063106. ⟨10.1063/1.4997914⟩. ⟨hal-02025076⟩

• Article dans une revue

High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

Ezgi Dogmus, Riad Kabouche, Astrid Linge, Etienne Okada, Malek Zegaoui, F Medjdoub

Physica Status Solidi A (applications and materials science), 2017, 214 (8), pp.1600797. ⟨10.1002/pssa.201600797⟩. ⟨hal-03028465⟩

• Article dans une revue

Anthraquinone modification of microporous carbide derived carbon films for on-chip micro-supercapacitors applications

Kévin Brousse, C. Martin, A.L. Brisse, C. Lethien, Patrice Simon, Pierre-Louis Taberna, T. Brousse

The modification of carbide derived carbon (CDC) thin film electrodes with anthraquinone (AQ) molecules was demonstrated by using pulsed chronoamperometry, in 0.1 M NEt4BF4/ACN solution of AQ diazonium derivative. The functionalization of CDC electrodes was only possible when a critical pore size…

Electrochimica Acta, 2017, 246, pp.391 - 398. ⟨10.1016/j.electacta.2017.06.037⟩. ⟨hal-01623096⟩

• Article dans une revue

Capacity Bounds for Additive Symmetric $\alpha $ -Stable Noise Channels

Mauro de Freitas, Malcolm Egan, Laurent Clavier, Alban Goupil, Gareth W. Peters, Nourddine Azzaoui

IEEE Transactions on Information Theory, 2017, 63 (8), pp.5115-5123. ⟨10.1109/TIT.2017.2676104⟩. ⟨hal-02088563⟩

• Communication dans un congrès

Automatic Inference of Energy Models for Peripheral Components in Embedded Systems

Nadir Cherifi, Thomas Vantroys, Alexandre Boé, Colombe Hérault, Gilles Grimaud

Surrounding autonomous embedded devices are in a constant expansion. The advent and the rise of Internet of Things (IoT) enable these objects to take a giant step forward, especially regarding their large scale deployment in real-world applications of the everyday life. A significant part of these…

FiCloud 2017 : The 5th International Conference on Future Internet of Things and Cloud, Aug 2017, Prague, Czech Republic. ⟨hal-01599169⟩

• Article dans une revue

Unipolar and Bipolar High-Magnetic-Field Sensors Based on Surface Acoustic Wave Resonators

V. Polewczyk, K. Dumesnil, D. Lacour, M. Moutaouekkil, H. Mjahed, Nicolas Tiercelin, S. Petit-Watelot, H. Mishra, Yannick Dusch, S. Hage-Ali, O. Elmazria, F. Montaigne, Abdelkrim Talbi, Olivier Bou Matar, Michel Hehn

While surface acoustic wave (SAW) sensors have been used to measure temperature, pressure, strains, and low magnetic fields, the capability to measure bipolar fields and high fields is lacking. In this paper, we report magnetic surface acoustic wave sensors that consist of interdigital transducers…

Physical Review Applied, 2017, 8 (2), ⟨10.1103/PhysRevApplied.8.024001⟩. ⟨hal-01686932⟩

• Article dans une revue

Normally-off AlGaN/GaN MOS-HEMT using ultra-thin Al_0.45 Ga_0.55N barrier layer

Ahmed Chakroun, Abdelatif Jaouad, Meriem Bouchilaoun, Osvaldo Arenas, Ali Soltani, Hassan Maher

In this work, we report on the fabrication of a normally‐off AlGaN/GaN Metal–Oxide–Semiconductor High Electron Mobility Transistor (MOS‐HEMT) using an ultra‐thin Al0.45Ga0.55N barrier layer. The AlGaN barrier was thinned down to 1 nm using a digital etching process (Oxidation/Etching) and was…

• Article dans une revue

Comparative study of 2D‐OCDMA‐WDM system performance in 40‐Gb/s PON context

Hichem Mrabet, Iyad Dayoub, Rabah Attia

IET Optoelectronics, 2017, 11 (4), pp.141-147. ⟨10.1049/iet-opt.2016.0142⟩. ⟨hal-03508931⟩