Publications
Affichage de 5801 à 5810 sur 16232
Interaction between Cr-bearing pigments and transparent glaze: A transmission electron microscopy study
Louisiane Verger, Olivier Dargaud, Nicolas Menguy, David Troadec, Laurent Cormier
Journal of Non-Crystalline Solids, 2017, 459, pp.184 - 191. ⟨10.1016/j.jnoncrysol.2017.01.016⟩. ⟨hal-01458161⟩
One-dimensional electromechanical equivalent circuit for piezoelectric array elements
Abdelmajid Bybi, Nadia El Atlas, Hilal Drissi, Mohammed Garoum, Anne-Christine Hladky
3rd International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, Morocco. ⟨10.1109/EITech.2017.8255214⟩. ⟨hal-03300129⟩
Near-Field Scanning Millimeter-wave Microscope Combined with a Scanning Electron Microscope
Gilles Dambrine, Kamel Haddadi, Olaf C. Haenssler, Christophe Boyaval, Didier Theron
IEEE-Microwave-Theory-and-Techniques-Society International Microwave Symposium, IMS 2017, Jun 2017, Honolulu, HI, United States. pp.1656-1659. ⟨hal-03224653⟩
Study of the Contact and the Evaporation Kinetics of a Thin Water Liquid Bridge between Two Hydrophobic Plates
Etienne Portuguez, Arnaud Alzina, Philippe Michaud, D. Hourlier, Agnès Smith
Advances in Materials Physics and Chemistry, 2017, 07 (04), pp.99 - 112. ⟨10.4236/ampc.2017.74009⟩. ⟨hal-01876680⟩
Evaluation of the Impact of Transient Disturbances on Railway Signaling Systems Using an Adapted Time-Frequency Analysis Method
Mohamed Raouf Kousri, Virginie Deniau, Marc Heddebaut, S. Baranowski
International Journal of Electronics and Telecommunications, 2017, 63 (4), pp.347-354. ⟨10.1515/eletel-2017-0047⟩. ⟨hal-01718703⟩
A D-Band Passive Receiver with 10 dB Noise Figure for In-situ Noise Characterization in BiCMOS 55 nm
Simon Bouvot, Thomas Quemerais, Joao Carlos Azevedo Goncalves, Sylvie Lepilliet, Guillaume Ducournau, Francois Danneville, Daniel Gloria
IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, United States. ⟨10.1109/SIRF.2017.7874385⟩. ⟨hal-03272697⟩
V-shaped InAs/Al<sub>0.5</sub>Ga<sub>0.5</sub>Sb vertical tunnel FET on GaAs (001) substrate with I<sub>ON</sub>=433 µA.µm<sup>-1</sup> at V<sub>DS</sub>= 0.5V
Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, X. Wallart, L. Desplanque
Universal behavior of electron g -factors in semiconductor nanostructures
Athmane Tadjine, Yann-Michel Niquet, Christophe Delerue
Physical Review B, 2017, 95 (23), pp.235437. ⟨10.1103/PhysRevB.95.235437⟩. ⟨hal-02906812⟩
Nanomaterials for transdermal drug delivery: beyond the state of the art of liposomal structures
Roxana Jijie, Alexandre Barras, Rabah Boukherroub, Sabine Szunerits
Journal of materials chemistry B, 2017, 5 (44), pp.8653-8675. ⟨10.1039/C7TB02529G⟩. ⟨hal-02189348⟩
Dielectric properties characterization of saline solutions by near-field microwave microscopy
S. Gu, Tianjun Lin, T. Lasri
Measurement Science and Technology, 2017, 28 (1), pp.014014. ⟨10.1088/1361-6501/28/1/014014⟩. ⟨hal-03538487⟩