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Affichage de 6171 à 6180 sur 16256

Article dans une revue

Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II

Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, Magali Gregoire, Emmanuel Dubois, Maud Vinet

In this paper, the insertions of dielectric in metal/insulator/semiconductor contacts are considered via their associated impact on the dc and ac performances. Based on dc output characteristics projections, we found that single insertion and/or single-metal integration schemes are unlikely to…

IEEE Transactions on Electron Devices, 2016, 63 (9), pp.3419-3423. ⟨10.1109/TED.2016.2590826⟩. ⟨hal-03325006⟩

Communication dans un congrès

Graphene field effect transistors on flexible substrate : stable process and high RF performance

Wei Wei, Emiliano Pallecchi, Mohamed Moez Belhaj, Alba Centeno, Amaia Zurutuza, Dominique Vignaud, Henri Happy

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured…

11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩. ⟨hal-03335833⟩

Article dans une revue

Channel sounding and indoor radio channel characteristics in the W-band

Maria-Teresa Martinez-Ingles, Davy Gaillot, Juan Pascual-Garcia, Jose-Maria Molina-Garcia-Pardo, Jose-Victor Rodriguez, Lorenzo Rubio, Leandro Juan-Llacer

This work presents directional radio channel measurements in the W-band using a commercial versatile channel sounder based on a vector network analyzer (VNA), capable of measuring scattering parameters from 75 to 500 GHz with frequency converters. The commercial setup has been modified by…

EURASIP Journal on Wireless Communications and Networking, 2016, 2016, pp.30,. ⟨10.1186/s13638-016-0530-7⟩. ⟨hal-03346227⟩

Article dans une revue

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

F Medjdoub, Riad Kabouche, Ezgi Dogmus, Astrid Linge, Malek Zegaoui

We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a…

Electronics, 2016, 5 (1), pp.12. ⟨10.3390/electronics5010012⟩. ⟨hal-03028337⟩

Article dans une revue

Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

Valentina Giorgis, François Morini, Tianqi Zhu, J.F. Robillard, X. Wallart, Jean-Louis Codron, Emmanuel Dubois

In this work, we present the synthesis and the characterization of low work function thin films for Micro Thermionic Converters (MTC). The objective is producing a device operating at relatively low temperature (< 1000 K). We aim at improving the MTC efficiency by reducing the work function of…

Journal of Applied Physics, 2016, 120 (20), pp.205108. ⟨10.1063/1.4968532⟩. ⟨hal-03276235⟩

Communication dans un congrès

Plasmonic analogue of electromagnetically induced transparency in detuned nano-cavities coupled to a waveguide

A. Noual, O.E. Abouti, E.H.E. Boudouti, Abdellatif Akjouj, Bahram Djafari-Rouhani, Yan Pennec

We theoretically investigate the classical analogue of electromagnetically induced transparency (EIT) in a plasmonic structure constituted by double side cavities connected symmetrically to a waveguide. The EIT is demonstrated by simply detuning the sizes of the two cavities (i.e., the length…

Mediterranean Conference on Information and Communication Technologies, MedCT 2015, May 2015, Saïdia, Morocco. pp.539-544, ⟨10.1007/978-3-319-30301-7_57⟩. ⟨hal-03508200⟩

Article dans une revue

Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

Carlos Daher, Jeremie Torres, Ignacio Iñiguez-De-La-Torre, Philippe Nouvel, Luca Varani, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, Javier Mateos, Tomas González

IEEE Transactions on Electron Devices, 2016, 63 (1), pp.353 - 359. ⟨10.1109/TED.2015.2503987⟩. ⟨hal-01638570⟩