Publications

• Article dans une revue

Improved Performance of YIG (Y₃Fe₅O₁₂) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, Xiaodong Tang, Freddy Ponchel, Denis Remiens, Xianlin Dong

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88%…

• Communication dans un congrès

Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Christophe Virgilio, Lucile Broussous, Philippe Garnier, Julien Carlier, Pierre Campistron, V. Thomy, Malika Toubal, Pascal Besson, Laurence Gabette, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial…

13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

• Communication dans un congrès

Contact resistance study of “edge-contacted” metal-graphene interfaces

V. Passi, A. Gahoi, J. Ruhkopf, S. Kataria, Francois Vaurette, E. Pallecchi, H. Happy, M. C. Lemme

The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". The parameter space for different hole patterns in…

46th European Solid-State Device Conference, ESSDERC 2016, Sep 2016, Lausanne, Switzerland. pp.236-239, ⟨10.1109/ESSDERC.2016.7599629⟩. ⟨hal-03335829⟩

• Article dans une revue

Modeling and simulation of InAs/GaAs quantum dots for solar cell applications

A. Benahmed, Abdelkader Aissat, Abdelmalek Benkouider, Jean-Pierre Vilcot

This paper proposes a method of modeling and simulation of InAs/GaAs-based quantum dots (QDs) for solar cell. The main objective is to find the growth parameters in order to produce an optimal double heterostructure using two semiconductor materials InAs and GaAs. We are interested in particular on…

Optik, 2016, 127 (7), pp.3531-3534. ⟨10.1016/j.ijleo.2015.12.136⟩. ⟨hal-01434975⟩

• Communication dans un congrès

A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Ilias Sourikopoulos, Antoine Frappé, Andreia Cathelin, Laurent Clavier, Andreas Kaiser

This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body…

46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Sep 2016, Lausanne, Switzerland. pp.145-148, ⟨10.1109/ESSCIRC.2016.7598263⟩. ⟨hal-03270099⟩

• Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of…

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

• Article dans une revue

METASTABILITY OF FINITE STATE MARKOV CHAINS: A RECURSIVE PROCEDURE TO IDENTIFY SLOW VARIABLES FOR MODEL REDUCTION

Claudio Landim, T. Xu

Consider a sequence (η N (t) : t ≥ 0) of continuous-time, irreducible Markov chains evolving on a fixed finite set E. Denote by R N (η, ξ) the jump rates of the Markov chain η N t , and assume that for any pair of bonds (η, ξ),

ALEA : Latin American Journal of Probability and Mathematical Statistics, 2016. ⟨hal-01728594⟩

• Communication dans un congrès

Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding

Emmanuel Dubois, Justine Philippe, Matthieu Berthomé, J.F. Robillard, Christophe Gaquière, Francois Danneville, Daniel Gloria, Christine Raynaud

Based on a simple process referred to as ultimate thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and…

6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. ⟨10.1109/ESTC.2016.7764513⟩. ⟨hal-03272693⟩

• Communication dans un congrès

Coherent & tunable THz source

R. Paquet, S. Blin, M. Myara, L. Le Gratiet, M. Sellahi, B. Chomet, P. Latzel, Guillaume Ducournau, Jean-Francois Lampin, G. Beaudoin, I. Sagnes, A. Garnache

Meeting GDR NanoTeramir, 2016, Paris, France. ⟨hal-01919731⟩

• Communication dans un congrès

Containment nuclear plant structures evaluation by non destructive testing: strategy and results

Vincent Garnier, Jean-Marie Henault, Hamid Hafid, Jérôme Verdier, Jean François Chaix, Odile Abraham, Zoubir Medhi Sbartaï, Jean-Paul Balayssac, Bogdan Piwakowski, Géraldine Villain, Xavier Derobert, Cédric Payan, Sandrine Rakotonarivo, Éric Larose, Hognon Sogbossi, Quang Anh Vu, Martin Lott, Jean-Baptiste Legland, Olivier Durand, Radoslaw Drelich, Charles Ciccarone

Containment nuclear plants structures are an ultimate barrier in the event of an accident. Mechanical resistance and tightness are the two functions that they are expected to provide. To evaluate their capacity to perform them, destructive testing cannot be used to characterize the material. Non-…

TINCE 2016 3rd Conference on Technological Innovations in Nuclear Civil Engineering, Sep 2016, Paris, France. 13p. ⟨hal-01599552⟩