Publications

Affichage de 6541 à 6550 sur 16063


  • COMM

[Invité] Oxydes fonctionnels pour les mémoires résistives : du matériau au composant

F. Alibart

Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", 2014, Autrans, France. ⟨hal-01055002⟩

  • COMM

[Invited] A microwave induced remote afterglow reactor for the deposition of organosilicon plasma polymers

Garrett Curley

Workshop on Nanoscale Processing for MEMS and NEMS, 2014, Villeneuve d'Ascq, France. ⟨hal-00976623⟩

  • ART

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • COMM

Epitaxial growth of MgO tunnel barrier on epitaxial graphene

Florian Godel, Emmanuelle Pichonat, Dominique Vignaud, Hicham Majjad, Dominik Metten, Yves Henry, Stéphane Berciaud, Jean-François Dayen, David Halley

7th CNRS-EWHA Winter School 2014, 2014, Strasbourg, France. ⟨hal-01055000⟩

  • COMM

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Mireille Cuniot-Ponsard, Irma Saraswati, S.-M. Ko, Mathieu Halbwax, Y.-H. Cho, N.-R. Poespawati, El Hadj Dogheche

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France. ⟨hal-00961405⟩

  • ART

A simple and inexpensive technique for PDMS/silicon chip alignment with sub-µm precision

R. Sivakumarasamy, K. Nishiguchi, A. Fujiwra, Dominique Vuillaume, N. Clement

Analytical Methods, 2014, 6, pp.97-101. ⟨10.1039/c3ay41618f⟩. ⟨hal-00916286⟩

  • PROCEEDINGS

Note storiche sul carattere fisico del Trattato di Fortificazione di Galilei (Historical Notes on Physical Features of Galileo's Trattato di Fortificazione)

Raffaele Pisano

Proceedings of 27th and 29th annual SISFA Conferences Societá Italiana degli Storici della Fisica e dell'Astronomia, Aracne, pp.65-75, 2014, 978-88-548-7206-6. ⟨10.4399/97888548720666⟩. ⟨hal-04512971⟩