Publications

• Communication dans un congrès

Narrow linewidth generation at 1 THz using cascaded Brillouin fiber lasers and quasi-optic UTC-PD

Guillaume Ducournau, Denis Bacquet, P. Szriftgiser, Fabio Pavanello, Emilien Peytavit, Mohammed Zaknoune, Alexandre Beck, Jean-Francois Lampin

Narrow linewidth THz generation using a cascaded Brillouin fibre laser structure and a unitraveling carrier photodiode is proposed. Using two distributed feedback lasers separated by > 1 THz with 1 MHz initial linewidth, the linewidth of the realized THz source is found to be < 100 Hz at 1014…

39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2014, Tucson, United States. ⟨10.1109/IRMMW-THz.2014.6956153⟩. ⟨hal-03286169⟩

• Article dans une revue

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Issam Hasnaoui, Alexandre Pottrain, Thomas Lacave, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull…

Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩. ⟨hal-01055077⟩

• Communication dans un congrès

Experimental investigation of the characteristics of the electromagnetic reverberation in the UWB bands

Aliou Bamba, Wout Joseph, Emmeric Tanghe, Luc Martens, Davy Gaillot, M. Lienard, Jose-Maria Molina-Garcia-Pardo, Maria-Teresa Martinez-Ingles

The electromagnetic reverberation time characteristics are investigated at UltraWide Band (UWB) frequencies, i.e., from 2 to 10 GHz. The reverberation time is bandwidth independent and decreases as the frequency increases. Besides, the reverberation ratio - the contribution of the diffuse fields in…

2014 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, AP-S/URSI 2014, Jul 2014, Memphis, TN, United States. pp.1181-1182, ⟨10.1109/APS.2014.6904917⟩. ⟨hal-03346231⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• Article dans une revue

Limitations of the impulse response of GaAs MSM photoswitch

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin

As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor…

International Journal of Advances in Engineering and Technology, 2014, 7, pp.75-81. ⟨hal-00955229⟩

• Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is…

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

• Ouvrages

Lazare and Sadi Carnot. A Scientific and Filial Relationship. 2nd ed

Charles C. Gillispie, Raffaele Pisano

Springer, 2014, 978-94-017-8010-0. ⟨hal-04515864⟩

• Article dans une revue

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier, Éric Frayssinet, Magdalena Chmielowska, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, P. de Mierry, Sebastien Chenot, Julien Camus, Keltouma Aït Aïssa, Quentin Simon, Laurent Le Brizoual, Mohamed Abdou Djouadi, N. Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton, Jean-Claude de Jaeger

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based…

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩. ⟨hal-00966112⟩

• Autre publication scientifique

Etude et implémentation d'une architecture temps réel pour l'optimisation de la compression H.264/AVC de vidéos SD/HD

Eloïse Vidal

2014. ⟨hal-00971712⟩

• Article dans une revue

Electrical method for crosstalk cancellation in transducer arrays

Abdelmajid Bybi, Christian Granger, Sébastien Grondel, Anne-Christine Hladky, Jamal Assaad

In this paper, we report a new and simple electrical method to cancel crosstalk in the acoustical arrays. This solution has several advantages compared with that proposed in a previous paper (Bybi et al 2013) [17] where adapted electrical voltages were applied to each neighboring element of the…

NDT & E International, 2014, 62, pp.115-121. ⟨10.1016/j.ndteint.2013.12.003⟩. ⟨hal-00934426⟩