Publications

• Article dans une revue

Biostimulation as an attractive technique to reduce phenanthrene toxicity for meiofauna and bacteria in lagoon sediment

Haithem Louati, O.B. Said, A. Soltani, P. Got, Cristiana Cravo-Laureau, Robert Duran, P. Aissa, O. Pringault, E. Mahmoudi

A microcosm experiment was setup to examine (1) the effect of phenanthrene contamination on meiofauna and bacteria communities and (2) the effects of different bioremediation strategies on phenanthrene degradation and on the community structure of free-living marine nematodes. Sediments from…

Environmental Science and Pollution Research, 2014, 21 (5), pp.3670-3679. ⟨10.1007/s11356-013-2330-5⟩. ⟨hal-01631850⟩

• Article dans une revue

Bragg band gaps tunability in an homogeneous piezoelectric rod with periodic electrical boundary conditions

Sébastien Degraeve, Christian Granger, Bertrand Dubus, Jerome O. Vasseur, Mai Pham Thi, Anne-Christine Hladky

An homogeneous piezoelectric rod is shown to exhibit Bragg band gaps when an electrical boundary condition is applied periodically with the help of metallic electrodes. An analytical model is developed which formulation depends on the applied electric boundary condition and reveals that Bragg band…

Journal of Applied Physics, 2014, 115, 194508, 8 p. ⟨10.1063/1.4876757⟩. ⟨hal-00995265⟩

• Communication dans un congrès

Etude expérimentale du phénomène d'auto-collimation d'une source cylindrique ultrasonore insérée dans un cristal phononique

B. Morvan, A. Tinel, Jerome O. Vasseur, R. Sainidou, P. Rembert, N. Swinteck, P. Deymier

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. ⟨hal-00978396⟩

• Communication dans un congrès

From semiconductor nanocrystals to artificial graphene and topological insulator

Efterpi Kalesaki, Christophe Delerue, Cristiane Morais Smith, Wouter Beugeling, Guy Allan, Daniel Vanmaekelbergh

Recent advancements in colloidal chemistry indicate that two-dimensional single-crystalline sheets of semiconductors forming a honeycomb lattice can be synthesized from semiconductor nanocrystals [1]. We perform atomistic tight-binding calculations of the band structure of CdSe sheets with such a…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France. ⟨hal-00966143⟩

• Communication dans un congrès

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, El Hadj Dogheche

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩

• Communication dans un congrès

Description statistique du comportement de la fonction de Green dans un milieu réverbérant : applications à la localisation de source

Hossep Achdjian, Emmanuel Moulin, Farouk Benmeddour, Jamal Assaad

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. Session APUG1 : Acoustique physique et propagation, papier CFA2014/187, 46-51. ⟨hal-00978409⟩

• Article dans une revue

Measurement techniques for RF nanoelectronic devices : new equipment to overcome the problems of impedance and scale mismatch

Henri Happy, Kamel Haddadi, Didier Theron, Tuami Lasri, Gilles Dambrine

Scaling of electronic device dimensions into the nanoscale regime has been at the basis of the semiconductor industry for several decades. Traditional materials have been pushed to their limits, which means that entirely new materials and new device structures are now required. The development of…

IEEE Microwave Magazine, 2014, 15 (1), pp.30-39. ⟨10.1109/MMM.2013.2288710⟩. ⟨hal-00936563⟩

• Article dans une revue

Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition

Mireille Cuniot-Ponsard, Irma Saraswati, S.M. Ko, Mathieu Halbwax, Y.H. Cho, El Hadj Dogheche

We report the measurement of the (r13, r33) Pockels electro-optic coefficients in a GaN thin film grown on a Si(111) substrate. The converse piezoelectric (d33) and electro-absorptive coefficients are simultaneously determined. Single crystalline GaN epitaxial layers were grown with a AlGaN buffer…

Applied Physics Letters, 2014, 104, 101908, 4 p. ⟨10.1063/1.4868427⟩. ⟨hal-00964286⟩

• Communication dans un congrès

Modeling and evaluation of power transmission of flapping wing nano air vehicle

Alexandre Bontemps, Sébastien Grondel, Thomas Vanneste, Samuel Dupont, Eric Cattan

In the last decade researchers pursued the development of tiny flying robots inspired by natural flyers. Within this context our main objective is to devise a flying robot-mimicking insect in terms of kinematics and scale using MEMS technologies. For this purpose, an original design has been…

IEEE/ASME 10th International Conference on Mechatronic and Embedded Systems and Applications (MESA), Sep 2014, Senigallia, Italy. pp.1-6, ⟨10.1109/MESA.2014.6935524⟩. ⟨hal-03280242⟩

• Communication dans un congrès

Influence of an interfacial AlxIn1-xSb layer on the strain relaxation and surface morphology of thin GaSb layers epitaxially grown on GaAs(001)

Mathieu Danoy, Pierre-François Angry, Julien Gavrel, Charlène Brillard, L. Desplanque, Y. Wang, P. Ruterana, Xavier Wallart

This work focuses on the strain relaxation and surface morphology of 10 ML thick GaSb layers on GaAs. It is shown that full relaxation is never reached for this thickness. The use of an AlSb interfacial layer only slightly improves strain relaxation but greatly reduces surface roughness. Finally,…

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. ⟨hal-00992670⟩